Showing papers by "Jean Massies published in 1985"
TL;DR: The effect of chemical etching by H2S04/H202/H20 (5/1/1) mixtures and of mechanopolishing by bromine-methanol diluted solution on GaAs and InP (001) substrates for molecular beam epitaxy (MBE) has been studied using X-ray photoelectron spectroscopy (XPS).
Abstract: The effect of chemical etching by H2S04/H202/H20 (5/1/1) mixtures and of mechanopolishing by bromine-methanol diluted solution on GaAs (001) and InP (001) substrates for molecular beam epitaxy (MBE) has been studied using X-ray photoelectron spectroscopy (XPS). The final rinse in running deionized water does not produce any passivating oxide layer on the substrate surface. Oxidation observed on GaAs and InP after these cleaning procedures occurs during substrate handling in air. The H2S04/H202/H20 mixture produces arsenic rich surface layers having an atomic ratio As/Ga of 1.15, whereas the bromine-methanol mechanopolishing leads to an arsenic or phosphorus depleted surface with atomic ratios As/Ga=0.7 and P/In=0.65.
26 citations