Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.

A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries

A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.

Solar cell and manufacturing method thereof

The present invention relates to a composite electrode material for a rechargeable battery; to a method of making a composite electrode material; to an electrode comprising the composite electrode material, especially an anode; to cells including electrodes or anodes including the composite electrode material; and to devices including said cells. In particular, there is provided a composite electrode material for a rechargeable battery cell comprising: a. an electroactive material; and b. a polymeric binder including pendant carboxyl groups characterised in that (i) the electroactive material comprises one or more components selected from the group comprising an electroactive metal, an electroactive semi-metal, an electroactive ceramic material, an electroactive metalloid, an electroactive semi-conductor, an electroactive alloy of a metal, an electroactive alloy of a semi metal and an electroactive compound of a metal or a semi-metal, (ii) the polymeric binder has a molecular weight in the range 300,000 to 3,000,000 and (iii) 40 to 90% of the carboxyl groups of the polymeric binder are in the form of a metal ion carboxylate salt.

An electrode composition for a secondary battery cell

An electrically interconnected mass includes elongated structures. The elongated structures are electrochemically active and at least some of the elongated structures cross over each other to provide intersections and a porous structure. The elongated structures include doped silicon.

Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries

The invention provides a composition comprising a plurality of electroactive porous particle fragments comprising silicon as an electroactive material characterised in that each porous particle fragment comprises a network of pores defined and separated by silicon containing walls. The network of pores suitably comprises a three dimensional arrangement of pores extending through the volume of the particle in which the pore openings are provided on two or more planes over the surface of the particle. The composition of the first aspect of the invention is an electroactive material that is able to form an alloy with lithium and can be used in the fabrication of anodes for use in lithium ion secondary batteries. A method of fabricating the silicon containing porous particle fragments is also disclosed.

Porous electroactive material

The present invention discloses acid corrosion solution for preparing polycrystalline silicon pile surface and its usage. The solution is compounded with oxidant and hydrofluoric acid and through mixing, and the oxidant is nitrate or nitrite. During use, the cut polycrystalline silicon chip is set inside the corrosion solution for corrosion at the temperature of -10 to +25 deg.c for 0.5-20 min to eliminate damage surface caused by wire electrode cutting, with the acid corrosion time and temperature being dependent on the solution concentration. The present invention is suitable for both intermittent production and continuous production, and has easy treatment of the produced waste acid.

Acid corrosion solution for preparing multicrystal silicon pile surface and its using method

The present invention relates to the industrial field of semiconductor manufacture. The present invention provides a method for chemically processing a surface of a semiconductor substrate comprising the steps of: placing a semiconductor substrate (4) above a chemical solution (5) by a shaft (2) and making the lower surface of the semiconductor substrate (4) be at a certain distance from the liquid surface of the chemical solution (5); and jetting the chemical solution onto the lower surface of the semiconductor substrate by a jet apparatus (3) to perform the chemical processing on the lower surface, and a device for the same including a chemical tank (1) containing a chemical solution, a shaft (2) for supporting the semiconductor substrate (4) above the chemical solution, and a jet apparatus (3) for jetting the chemical solution onto the lower surface of the semiconductor substrate (4). The method may perform a chemical treatment on one side of a semiconductor substrate without any protection for the other side.

A method for processing a semiconductor substrate surface and a chemical processing device for the semiconductor substrate surface

An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride The oxidant is a nitrate or nitrite The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is −10° C to 25° C

An acid corrosion soluton for preparing polysilicon suede and the applied method of it

The present invention belongs to semi-conductor manufacturing industry field. The present invention discloses especially chemical processing method and device of a novel semi-conductor substrate surface. The chemical processing method of the present invention placed the semi-conductor substrate on the top of the chemical solution by using a bracket, and between the lower surface of the semi-conductor substrate and the liquid level of the chemical solution has a certain distance, and injects the chemical solution to the lower surface of the semi-conductor substrate by the spraying apparatus, thereby the lower surface is executed the chemical processing. The device of the present invention includes a chemical groove for holding the chemical solution, a bracket for placing the semi-conductor substrate above the chemical solution, and a spraying apparatus for injecting the chemical solution to the lower surface of the semi-conductor substrate. The chemical processing method and device of the present invention can execute chemical processing only for certain surface of the semi-conductor substrate, while no need protection for another surface.

Semiconductor substrate surface chemical processing method and apparatus

The invention relates to the sphere of industrial production of semiconductors and provides a method for chemical processing a semiconductor substrate surface, comprising the following steps. A semiconductor substrate (4) is placed above the chemical solution (5) by a holder (2). A distance exits between the lower surface of the semiconductor substrate (4) and the liquid level of the chemical solution (5). The chemical solution is sprayed onto the lower surface of the semiconductor substrate by a spray device (3), thus chemically processing the lower surface of the semiconductor substrate. The device for such processing comprises a chemical bath (1) containing a chemical solution, a holder (2) holding the semiconductor substrate (4) above the chemical solution, and a spray device (3) spraying the chemical solution onto the lower surface of the semiconductor substrate (4). Only one surface of the semiconductor substrate (4) can be processed by this method, without protecting the other surface.

Jingjia Ji

Papers

Acid corrosion solution for preparing multicrystal silicon pile surface and its using method

A method for processing a semiconductor substrate surface and a chemical processing device for the semiconductor substrate surface

An acid corrosion soluton for preparing polysilicon suede and the applied method of it

Semiconductor substrate surface chemical processing method and apparatus

A method for chemical processing a semiconductor substrate surface and a device therefor