An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Plasma activated conformal dielectric film deposition

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.

Formation of silicon oxide using non-carbon flowable cvd processes

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
 
(R 1 R 2 N) n SiR 3 4-n   (I)
 
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Precursors for depositing silicon-containing films and methods for making and using same

PROBLEM TO BE SOLVED: To provide aminosilane precursors for accumulating silicon-containing films, and to provide a method for accumulating silicon-containing films from the aminosilane precursors. SOLUTION: There is provided the aminosilane precursor comprising the following formula (I): (R 1 R 2 N) n SiR 3 4-n [wherein, substituents R 1 and R 2 are each independently a 1 to 20C alkyl or a 6 to 30C aryl; at least one of the substituents R 1 and R 2 is an electron-attracting substituent selected from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, RCOO, SO, SO 2 , and SO 2 R; R 3 is selected from H, a 1 to 20C alkyl and a 6 to 12C aryl; (n) is the number in a range of 1 to 4] for accumulating the silicon-containing films. COPYRIGHT: (C)2010,JPO&INPIT

Precursor for accumulating silicon-containing film and method for producing and using the same

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (R 1 R 2 N) n SiR 3 4-n €ƒ€ƒ€ƒ€ƒ€ƒ(I) wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Precursors for depositing silicon-containing films and methods of using same

Vorläufer zur Ablagerung von siliziumhaltigen Schichten und Verfahren zu deren Herstellung und Verwendung

PROBLEM TO BE SOLVED: To provide aminosilane precursors for accumulating a silicon-containing film, and a method of accumulating the silicon-containing film from these aminosilane precursors.SOLUTION: There is provided an aminosilane precursor for accumulating a silicon-containing film having the formula (I): (RRN)SiR(I), where substituents Rand Rare each independently selected from a C1 to 20 alkyl group and a C6 to 30 aryl group, at least one of substituents Rand Rcontains an electron-withdrawing substituent selected from F, Cl, Br, I, CN, NO, PO(OR), OR, RCOO, SO, SOand SOR, and Ris selected from H, a C1 to 20 alkyl group or a C6 to 12 aryl group, and n is the number in a range of 1 to 4.

Jingping Wu

Papers

Precursors for depositing silicon-containing films and methods for making and using same

Precursor for accumulating silicon-containing film and method for producing and using the same

Precursors for depositing silicon-containing films and methods of using same

Vorläufer zur Ablagerung von siliziumhaltigen Schichten und Verfahren zu deren Herstellung und Verwendung

Precursor for silicon-containing film accumulation and its manufacturing and use method