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High-Performance Flexible Photonic Synapse Transistors Based on a Bulk Composite Film of Organic Semiconductors with Complementary Absorption

The paper presents the main structural and topological solutions, the technology of obtaining and stabilizing multilayer thin-film resistive and tensoresistive structures with temperature self-compensation, which allows achieving a TCR value of no more than ± 1 × 10−6 and an instability of resistance no more than ± (0.01 … 0.02) %.

Multilayer thin-film resistive structures with temperature self-compensation for super-precision resistors and strain gauges

In this study, undoped Zn5Sb3Te (ZST) and N–Ti codoped ZST chalcogenides were investigated. The deposition rate of chalcogenides decreased when N and Ti were doped into ZST, caused by the low speed of reaction to form nitrides and the strong bond of Ti atoms, respectively. Surface roughness was significantly reduced to approximately one-seventh of the original value owing to the doping of N–Ti into ZST, implying high reliability. Based on X-ray diffraction and electrical measurements, the crystallization of ZST occurred after it was annealed at a high temperature between 250 °C and 300 °C, while codoping N–Ti into ZST further increased the crystallization temperature to above 300 °C. The crystallization temperature of N–Ti codoped ZST was approximately 150 °C higher than that of the conventional Ge2Sb2Te5 chalcogenide, indicating high thermal stability.

https://iopscience.iop.org/article/10.35848/1347-4065/acbda5/pdf

Jinyi Zhu

Papers

Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices