J
Jiro Ohshima
Researcher at Toshiba
Publications - 20
Citations - 349
Jiro Ohshima is an academic researcher from Toshiba. The author has contributed to research in topics: Layer (electronics) & Silicon. The author has an hindex of 10, co-authored 20 publications receiving 349 citations.
Papers
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Patent
Method of forming through holes by differential etching of stacked silicon oxynitride layers
Toshiyo Ito,Jiro Ohshima +1 more
TL;DR: In this article, a process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer is described.
Patent
Method of producing semiconductor device
TL;DR: In this paper, a method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming a first insulation film and selectively forming a second insulation film on predetermined portions of the first insulation by the use of a polycrystalline silicon film as the mask.
Patent
Method of manufacturing super self-alignment technology bipolar transistor
Shin-ichi Taka,Jiro Ohshima +1 more
TL;DR: In this article, the size of the base region on the major surface of the semiconductor substrate is defined by the size in diameter of the second opening of the spacer film.
Patent
Method of gettering a semiconductor device and forming an isolation region therein
TL;DR: In this paper, a thermal oxide film formed on a monocrystalline silicon layer is opened to expose a surface of the mon-coarse silicon layer to serve as a getter site.
Patent
Method of manufacturing bipolar transistor with self-aligned external base and emitter regions
Shin-ichi Taka,Jiro Ohshima +1 more
TL;DR: In this paper, a metal layer is formed by selective CVD method on an emitter region formed by using a field oxide film as a mask, and the distance between the emitter regions and external base region is controlled by a length of the metal layer creep up the bird's beak.