A grating-stabilized semiconductor laser comprises a semiconductor laser gain medium, an integrated low-index waveguide, and a waveguide grating segment providing optical feedback for laser oscillation. The laser may be adapted for multi-mode or single-mode operation. A multiple-mode laser may oscillate with reduced power and/or wavelength fluctuations associated with longitudinal mode wavelength shifts, relative to Fabry-Perot lasers lacking gratings. A single-mode laser may include a compensator, wavelength reference, and detector for generating an error signal, and a feedback mechanism for controlling the compensator for maintaining the laser wavelength locked to the reference. The laser may include means for altering, enhancing, tuning, and/or stabilizing the waveguide grating reflectivity spectral profile. The laser may be adapted for optical transverse-coupling to another waveguide.

Grating-stabilized semiconductor laser

A chip-to-chip optical interconnect includes a substrate, an optoelectronic die, and a waveguide structure The substrate includes an optical via passing through the substrate The optoelectronic die is disposed on the substrate and aligned to optically communicate through the optical via A waveguide structure is positioned proximate to the substrate and aligned with the optical via to communicate optical signals with the optoelectronic die through the optical via

Chip-to-chip optical interconnect

A multiple-core optical waveguide comprises: a substrate; lower and upper waveguide core layers; a waveguide core between the upper and lower waveguide core layers; upper and lower cladding; and middle cladding between the upper and lower waveguide core layers substantially surrounding the waveguide core. Each of the lower, middle, and upper claddings has a refractive index less than refractive indices of the lower waveguide core layer, the upper waveguide core layer, and the waveguide core. Along at least a given portion of the optical waveguide, the upper and lower waveguide core layers extend bilaterally substantially beyond the lateral extent of a propagating optical mode supported by the optical waveguide, the lateral extent of the supported optical mode being determined at least in part by the width of the waveguide core along the given portion of the optical waveguide.

Multiple-core planar optical waveguides and methods of fabrication and use thereof

An optocoupler, an optical interconnect and method of manufacture providing same are provided for coupling an optical signal between a high refractive index waveguide of an integrated circuit and a waveguide external to the integrated circuit. The optocoupler includes a thinned high refractive index waveguide having a thickness configured to exhibit an effective refractive index substantially matching a refractive index of the external waveguide.

Low loss directional coupling between highly dissimilar optical waveguides for high refractive index integrated photonic circuits

An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.

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Cmos compatible integrated dielectric optical waveguide coupler and fabrication

An optical apparatus comprises a semiconductor optical device waveguide formed on a semiconductor substrate, and an integrated end-coupled waveguide formed on the semiconductor substrate. The integrated waveguide may comprise materials differing from those of the device waveguide and the substrate. Spatially selective material processing may be employed for first forming the optical device waveguide on the substrate, and for subsequently depositing and forming the integrated end-coupled waveguide on the substrate. Spatially selective material processing enables accurate spatial mode matching and transverse alignment of the waveguides, and multiple device waveguides and corresponding integrated end-coupled waveguides may be fabricated concurrently on a common substrate on a wafer scale. The integrated end-coupled waveguide may be adapted for fulfilling one or more functions, and the device waveguide and/or integrated waveguide and/or spatially selective material processing steps may be adapted in a variety of ways for achieving the needed/desired degree of end-coupling.

Joel S. Paslaski

Papers

Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof