Showing papers by "John D. Bozek published in 1991"

Boron K‐shell spectroscopy of boron‐doped silicon

Abstract: The B K‐edge spectra of various model compounds (BF3, KBF4, B2O3, B(OH)3, orthocarborane (B10H10C2H2) and elemental boron) were investigated to characterize the sensitivity of B K‐edge spectra to local chemical environment. Electron yield detection of synchrotron photoabsorption at the boron K‐edge was used to study the B sites in Si(B) epilayers grown by molecular beam epitaxy and in situ B doped from evaporated B2O3. Although there were interesting spectral variations with composition and annealing, comparison between the x‐ray electron yield results and those from secondary ion mass spectroscopy and electrochemical capacitance voltage measurements indicate that the yield spectra are strongly influenced by surface segregation.