This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.

One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by "slow‐pull" out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989.

https://iopscience.iop.org/article/10.1149/1.2086825/pdf

The Evolution of Silicon Wafer Cleaning Technology

Transparent conductors as solar energy materials: A panoramic review

Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on Au, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyimide. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HF, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H/sub 2/O vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF/sub 6/ plasma, SF/sub 6/+O/sub 2/ plasma, CF/sub 4/ plasma, CF/sub 4/+O/sub 2/ plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported. Sample preparation and information about the etches is given.

/pdf/etch-rates-for-micromachining-processing-part-ii-2gdyzs6x1d.pdf

Etch rates for micromachining processing-Part II

Synthesis, properties, and applications of magnetic iron oxide nanoparticles

J.L. Vossen and W. Kern, Introduction. S.M. Rossnagel, Glow Discharge Plasma and Sources for Etching and Deposition. C.V. Deshpandey and R.F. Bunshah, Evaporation Processes. P.P. Chow, Molecular Beam Epitaxy. R. Parsons, Sputter Deposition Processes. P.C. Johnson, The Cathodic Arc Plasma Deposition of Thin Films. K.F. Jensen and W. Kern, Thermal Chemical Vapor Deposition. K.F. Jensen and T. Kuech, Metal-Organic Chemical Vapor Deposition. J.G. Eden, Photochemical Vapor Deposition. L.C. Klein, Sol-Gel Coatings. R. Reif and W. Kern, Plasma-Enhanced Chemical Vapor Deposition. G. Lucovsky, D.V. Tsu, R.A. Rudder, and R.J. Markunas, Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition. T.M. Mayer and S.D. Allen, Selected Area Processing. H.W. Lehman, Plasma-Assisted Etching. P.R. Puckett, S.L. Michel, and W.E. Hughes, Ion Beam Etching. C.I.H. Ashby, Laser-Driven Etching.

Thin Film Processes

/pdf/physics-of-thin-films-1af7gbg0f8.pdf

Physics of Thin Films

M.J. Brett, S.K. Dew, and T.J. Smy, Thin Film Microstructure and Process Simulation Using SIMBAD. S. Hamaguchi, Mathematical Methods for Thin Films Deposition Simulations. C.-C. Fang, V. Prasad, R.V. Joshi, F. Jones, and J.J. Hsieh, A Process Model for Sputter-Deposition of Thin Films Using Molecular Dynamics. T.S. Cale and V. Mahadev, Feature Scale Transport and Reaction during Low Pressure. Chapter References. Author Index. Subject Index.

Modeling of film deposition for microelectronic applications

M.A. Lieberman and R.A. Gottscho, Design of High- Density Plasma Sources for Materials Processing. O.A. Popov, Electron Cyclotron Resonance Plasma Sources and Their Use in Plasma-Assisted Chemical Vapor Deposition of Thin Films. S.L. Rohde, Unbalanced Magnetron Sputtering. C. Steinbruchel, The Formation of Particles in Thin-Film Processing Plasmas. References. Author Index. Subject Index.

John L. Vossen

Papers

Thin Film Processes

Physics of Thin Films

Modeling of film deposition for microelectronic applications

Plasma sources for thin film deposition and etching

Contemporary preparative techniques