J
John M Smith
Researcher at Motorola
Publications - 15
Citations - 564
John M Smith is an academic researcher from Motorola. The author has contributed to research in topics: Baseband & Lead frame. The author has an hindex of 7, co-authored 15 publications receiving 564 citations.
Papers
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Patent
Multi-channel digital transceiver and method
Smith Paul Fielding,John M Smith,Rottinghaus Alan P,Sheila Marie Rader,Pinckley Danny Thomas,Yuda Yehuda Luz,Daniel Morris Lurey,Kevin M. Laird,Tony Kobrinetz,Elder Robert C,Donald E Bailey +10 more
TL;DR: In this article, a multi-channel digital transceiver (400) receives uplink radio frequency signals and converts these signals to digital intermediate frequency signals (DIF) using a digital converter module (426).
Patent
High capacity sectorized cellular communication system
TL;DR: In this paper, a cellular radiotelephone communication system cell site equipment is provided, which includes a radio frequency transmitter operating as one signal frequency source and two signal combiner devices tuned to a first and a second signal frequency, respectively.
Patent
Antenna switching system
John M Smith,Schuler Joseph J +1 more
TL;DR: In this paper, an antenna switching system for handling high traffic sectors in a cellular radiotelephone system is proposed. But the system switches the cell's base station transmitters (210) to sectors that have more mobile traffic than they can handle.
Patent
Multiple access digital transmitter and receiver
Daniel Morris Lurey,Alan P. Rottinghaus,Sheila Marie Rader,Yuda Yehuda Luz,Paul Fielding Smith,John M Smith,Danny Thomas Pinckley,Kevin M. Laird,Tony Kobrinetz,Elder Robert C,Donald E Bailey +10 more
TL;DR: In this article, a digital receiver (200) and a transmitter (300) consisting of a plurality of antennas (202) for receiving uplink radio frequency signals and a multiplicity of analog-to-digital converters (210) for converting the received RF signals into digital signals was considered.
Patent
Method of manufacturing RF power semiconductor package
TL;DR: In this article, a high frequency power transistor carrier is made by bonding a metalized ceramic base to a lead frame strip, subsequently gold plating the resultant structure and then cutting the lead-frame strip to isolate the base and collector leads while still maintaining the transistor carriers in strip form.