Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

Process gas management for an inductively-coupled plasma deposition reactor

A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Semiconductor reaction chamber showerhead

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

An apparatus for processing a wafer including a reaction chamber having a reaction space for processing the wafer, a susceptor positioned within the reaction chamber and having a sidewall, at least one light source positioned outside of the reaction space, at least one window in the reaction chamber, and wherein the at least one light source is directed through the at least one window to contact the sidewall.

Apparatus and method for calculating a wafer position in a processing chamber under process conditions

A device for limiting travel of a valve including a body removably connected to a transfer module, a vacuum valve, or a reaction chamber, a travel limiting rod passing through the body to engage and limit travel of the valve, and wherein the body includes at least one mounting flange opposite the travel limiting rod.

Lockout tagout for semiconductor vacuum valve

Susceptor assemblies, reactors and systems including the assemblies, and methods of using the assemblies, reactors, and systems are disclosed. Exemplary susceptor assemblies include two or more sections that can be moved relative to each other to allow rapid changes in a substrate temperature. The movement of the two or more sections can additionally or alternatively be used to manipulate conductance of gas flow though a reactor.

Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same

Variable conductance gas distribution systems, reactors and systems including the variable conductance gas distribution systems, and methods of using the variable conductance gas distribution systems, reactors, and systems are disclosed. The variable conductance gas distribution systems allow rapid manipulation of gas-flow conductance through the gas distribution system.

Variable conductance gas distribution apparatus and method

A diaphragm valve is disclosed. The diaphragm valve may include, a valve body comprising a valve channel, the valve channel including an inlet channel and an outlet channel. The diaphragm valve may also include, a valve seat adjacent to the valve channel and a flexible diaphragm comprising a wetted surface and an opposing non-wetted surface, the flexible diaphragm being disposed adjacent to the valve channel. The diaphragm valve may also include, a flexible heater disposed over the non-wetted surface of the flexible diaphragm, and a valve actuator that is operable to operable to move the wetted surface of the flexible diaphragm into and out of contact with the valve seat. Valve components including a flexible heater and methods for forming such valve components are also disclosed.

John Shugrue

Papers

Apparatus and method for calculating a wafer position in a processing chamber under process conditions

Lockout tagout for semiconductor vacuum valve

Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same

Variable conductance gas distribution apparatus and method

Diaphragm valves, valve components, and methods for forming valve components