A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

Nitride semiconductor light emitting device

Disclosed is a light-emitting diode package, comprising: a package body having a cavity; a light-emitting diode chip having a plurality of light-emitting cells connected in serial with each other; a fluorescent body for converting the wavelength of light emitted by the light-emitting diode chip; and a pair of lead electrodes. The light-emitting cells are connected together in series between the pair of lead electrodes.

Light emitting diode package

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity and a plurality of terminal portions; a light-emitting device chip mounted on the mounting portion; a plurality of bonding wires for electrically connecting the plurality of terminal portions and the light-emitting device chip; a light-transmitting encapsulation layer filled in the cavity; and a light-transmitting cap member disposed in the cavity and blocking the encapsulation layer to contact the plurality of bonding wires.

Light emitting device package

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Light-emitting device and method of manufacturing the same

PROBLEM TO BE SOLVED: To provide a light-emitting element enhancing the luminous efficiency and luminance in a nitride-based semiconductor light-emitting element, and to provide a manufacturing method therefor.SOLUTION: An n-type semiconductor layer 120, an active layer 130, and a p-type semiconductor layer 140 are formed on a substrate 110, a portion of the n-type semiconductor layer is exposed by removing a portion of the p-type semiconductor layer and the active layer, so as to have at least one slope continuously from the p-type semiconductor layer to the active layer while having a gradient for the horizontal plane, a p-type metal bump 155 is formed above the p-type semiconductor layer, an n-type metal bump 150 is formed on the n-type semiconductor layer exposed, a p-type bonding pad 215 and an n-type bonding pad 210 are formed on a sub-mount substrate 200, flip-chip bonding is performed so that the p-type metal bump and n-type metal bump, and the p-type bonding pad and n-type bonding pad, are connected respectively, and then the substrate subjected to flip-chip bonding, and the sub-mount substrate are cut for each light-emitting element.

Light-emitting device and manufacturing method therefor

The present invention relates to a light emitting device comprising a plurality of light emitting cells which are spaced apart from each other; an insulation layer (70) which covers an entire surface of the light emitting cells; and an electrical connector (80) which is formed on the insulation layer (70), wherein each of the plurality of light emitting cells comprises a lower semiconductor layer (20); an upper semiconductor layer (40) disposed on a region of the lower semiconductor layer (20); an active layer (30) disposed between the lower semiconductor layer (20) and the upper semiconductor layer (40), an electrode layer (85) on a top surface of the upper semiconductor layer (40), and an ohmic metal layer (87) on a portion of the lower semiconductor layer (20). Electrode layer (85) and ohmic metal layer (87) are disposed between the respective semiconductor layer (20, 40) and the insulation layer (70), wherein the insulation layer (70) includes different opening portions exposing electrode layer (85) and ohmic metal layer (87), respectively. The electrical connector (80) connects the lower semiconductor layer (20) of one of the light emitting cells and the upper semiconductor layer (40) of another adjacent light emitting cell through the openings.

Jong Lam Lee

Papers

Light-emitting device and method of manufacturing the same

Light-emitting device and manufacturing method therefor

Light emitting device comprising a plurality of light emitting diode cells