The polymer-based synthesis of ceramics such as SiCO (and SiCN) leads to the incorporation of significant amounts of carbon into their molecular structure. A key feature of the nanostructure of these polymer-derived ceramics is the revelation of persistent, 1-5 nm size domains by small-angle X-ray scattering. Here we present a model for these nanodomains, which is consistent with the nuclear magnetic resonance (NMR) data and with the phenomenological properties of SiCO (high resistance to creep and viscoelastic behavior). The model consists of clusters of silica tetrahedra encased within an interdomain wall constituted from mixed bonds of SiCO, and from a network of sp 2 carbon. The model predicts the domain size as a function of the carbon content. These predictions are in reasonable agreement with the measurements of the nanodomains in SiCO synthesized with varying carbon contents (the domain size decreases with higher carbon). Simple maps are developed for easy reading of the domain size and the width of the interdomain boundary in the composition diagrams.

A Model for the Nanodomains in Polymer‐Derived SiCO

The subject invention relates to solid polymer electrolyte membranes comprising proton conducting polymers stable at temperatures in excess of 100° C., the polymer being basic polymer complexed with a strong acid or an acid polymer. The invention further relates to the use of such membranes in electrolytic cells and acid fuel cells. Particularly, the invention relates to the use of polybenzimidazole as a suitable polymer electrolyte membrane.

Proton conducting polymers used as membranes

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Spin-on-glass anti-reflective coatings for photolithography

A novel method of surface modification on thin-film-composite reverse osmosis membrane by grafting hydantoin derivative

A capping layer of an insulator such as silicon oxynitride is formed over horizontally closely spaced apart metal lines on an oxide layer of an integrated circuit structure formed on a semiconductor substrate. Low k silicon oxide dielectric material which exhibits void-free deposition properties in high aspect ratio regions between the closely spaced apart metal lines is then deposited over and between the metal lines and over the silicon oxynitride caps on the metal lines. After the formation of such void-free low k silicon oxide dielectric material between the closely spaced apart metal lines and the silicon oxynitride caps thereon, the structure is planarized to bring the level of the low k silicon oxide dielectric material down to the level of the tops of the silicon oxynitride caps on the metal lines. A further layer of standard k silicon oxide dielectric material is then formed over the planarized void-free low k silicon oxide dielectric layer and the silicon oxynitride caps. Vias are then formed through the standard k silicon oxide dielectric layer and the silicon oxynitride caps down to the metal lines. Since the vias are not formed through the low k silicon oxide dielectric material, formation of the vias does not contribute to poisoning of the vias. However, the presence of the low k silicon oxide dielectric material between the horizontally closely spaced apart metal lines reduces the horizontal capacitance between such metal lines.

Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines

A carbon-containing black glass has the empirical formula SiCxOy wherein x ranges from about 0.5 to about 2.0 and y ranges from about 0.5 to about 3.0 and is resistant to oxidation up to a temperature of about 1400 °C. The black glass is synthesized by heating a spiroxiloxane polymer in a non-oxidizing atmosphere up to a temperature in the range of from about 750 °C to about 1400 °C. The polymers are synthesized by reacting the spirosiloxane oligomers (I), wherein a and b are integers from 0 to 20, preferably 1 to 5, c and d are integers from 2 to 20, preferably 2 to 6, m is an integer from 0 to 10, preferably 0 to 4, and wherein for each silicon atom in the oligomer having R and R' moieties, R is independently selected from the group consisting of alkyl groups from C1 to C20, preferably C1 to C5, and R' is independently selected from the group consisting of hydrogen, and alkenyl groups from C2 to C20, preferably from C2 to C5. The black glass may be used to make moldable complex shapes, filled monoliths, fibers, fiber-reinforced matrix composites, and coatings for substrates such as ceramics, polymers, and carbon-carbon composites.

Silicon carboxide ceramics from spirosiloxanes

Carbon-containing black glass compositions of matter having the empirical formula SiCxOy and derived from the polymer precursors having the residue (I) or (II).

Carbon-containing black glass monoliths

Chlorine-resistant semipermeable membranes which comprise an interfacial polymerized reaction product composited on a porous support backing material may be prepared by contacting a porous support material such as polysulfone with an aqueous solution of an aromatic polyamine containing a chlorine substituent on the aromatic ring. The coated support material is then contacted with an organic solvent solution of aromatic polycarboxylic acid chloride for a period of time sufficient to form an interfacial polymerized reaction product on the surface of the support material. The resultant membrane composite may be used in separation processes such as desalination of brackish or sea water, the membrane being resistant to attack by chlorine which is present in the water.

Chlorine-resistant semipermeable membranes

A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are the ethers of the oligomeric condensation product of (a) dihydric phenol and formaldehyde and (b) a dialdehyde and 3 to 4 moles of a phenol.

Photodefinable interlevel dielectrics.

Epoxy resin compositions used in preparation of laminates for electronic applications are free of the solvents typically needed in current industrial practice. The use of certain mono-substituted dicyandiamides makes possible the elimination of such solvents since all of the components are soluble in epoxy resin to an extent which provides uniform properties in the cured laminates.

Joseph J. Zupancic

Papers

Silicon carboxide ceramics from spirosiloxanes

Carbon-containing black glass monoliths

Chlorine-resistant semipermeable membranes

Photodefinable interlevel dielectrics.

Solvent free epoxy resin compositions containing substituted cyanoguanidines