An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.

Apparatus and process for plasma-enhanced atomic layer deposition

Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Apparatus and methods for cyclical oxidation and etching

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Method for forming silicon-containing materials during a photoexcitation deposition process

The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.

Temperature measurement and control of wafer support in thermal processing chamber

An apparatus (200) and method for thermal processing a substrate (231), which includes a UV radiation source (222) disposed inside a chamber (230) and an infrared source (208) disposed outside the chamber (230) for supplying heat, activate electronic, or create active species inside the chamber (230).

Uv assisted thermal processing

An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.

Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber

The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Joseph M. Ranish

Papers

Method for forming silicon-containing materials during a photoexcitation deposition process

Temperature measurement and control of wafer support in thermal processing chamber

Uv assisted thermal processing

Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber

Pulse train annealing method and apparatus