Showing papers by "Junji Komeno published in 1981"

TL;DR: In this paper, the growth of highly uniform GaAs VPE layers with a thickness variation of less than ± 1% were successfully grown by the conventional AsCl 3 -Ga-H 2 system on large substrates having an area of about 20 cm 2.

TL;DR: In this article, a method of controlling doping profiles of GaAs VPE layers was developed for MESFET's applications, which allowed the growth of VPE layer having a doping profile for lo-hi-lo GaAs IMPATT's.