Showing papers by "Junji Komeno published in 1991"
TL;DR: In this paper, the InGaP/InGaAs/GaAs heterostructures were grown by atmospheric pressure MOVPE and the optimum gas switching sequence for achieving sufficient mobility and sheet carrier concentration was found.
37 citations
TL;DR: In this paper, the MOVPE growth of GaAs, AlGaAs and InGaAs on 3 inch GaAs substrates using tertiarybutylarsine (tBAs) with an inverted horizontal atmospheric pressure reactor was studied.
17 citations
TL;DR: In this paper, the authors demonstrate highly effective Si planar doping of GaAs by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) as an alternative arsenic source.
16 citations
TL;DR: In this article, the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaA/InGaA and InGaAs high electron mobility transistors (HEMTs) using tertiarybutylarsine (tBAs) on 3-inch GaAs substrates was demonstrated.
Abstract: We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) on 3-inch GaAs substrates. In the drain current-voltage characteristics, sharp pinch-off and excellent saturation were observed for HEMTs grown using tBAs as well as using arsine. A transconductance of 324 mS/mm and the K-factor of 418 mA/V2/mm were obtained using tBAs for n-AlGaAs/GaAs HEMTs with a 0.5-µm gate, while those for n-AlGaAs/InGaAs/GaAs pseudomorphic HEMTs were 350 mS/mm and 480 mA/V2/mm. These results verify that GaAs, AlGaAs, and InGaAs layers grown using tBAs are of sufficiently high quality for HEMT applications.
7 citations
22 May 1991
TL;DR: In this paper, the metalorganic vapor phase epitaxy (MOVPE) was used for high electron mobility transistor (HEMT) LSI, and the MOVPE was applied to HEMT 64 Kb SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W. It was shown that the grown layers meet the demands for LSI application.
Abstract: Reports on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. The low-pressure barrel reactor can grow twelve 3-inch wafers at a time. It is shown that the grown layers meet the demands for LSI application. The authors fabricated HEMT devices with gates 0.6 mu m long using photolithography, with excellent characteristics. They applied the MOVPE technique to HEMT 64 Kb SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W. >