Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

Nonvolatile Memory Devices, Channel Boosting Methods Thereof, Programming Methods Thereof, And Memory Systems Including The Same

A semiconductor memory device includes a memory cell array having a first group of main blocks, a second group of main blocks and redundancy blocks replacing the first group of main blocks or the second group of main blocks, a repair logic suitable for enabling a replacement signal when one or more of the second group of main blocks are defective, a control logic suitable for generating an address for the second group of main blocks in response to a dedicated command for access to one or more of the second group of main blocks, and an address decoder suitable for selecting one or more of the redundancy blocks based on the address for the second group of main blocks when the replacement signal is enabled.

Semiconductor memory device and method of operating the same

A driving method of an organic light emitting display device includes: classifying a plurality of luminance steps into at least a low luminance section and a high luminance section; and setting a reference luminance at a predefined level during the low luminance section and adjusting an off duty according to predetermined criteria for each step in the low luminance section.

Organic light emitting display device and driving method thereof

The embodiments described herein methods and devices that enhance the endurance of a non-volatile memory (e.g., flash memory). The method includes obtaining, for each of the plurality of die, an endurance metric. The method also includes sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, where each die group includes one or more die and each die group is associated with a range of endurance metrics. In response to a write command specifying a set of write data, the method further includes writing the write data to the non-volatile memory by writing in parallel subsets of the write data to the one or more die assigned to a single die group of the plurality of die groups.

Device and method for managing die groups

A method for data storage includes encoding each of multiple data items individually using a first Error Correction Code (ECC) to produce respective encoded data items. The encoded data items are stored in a memory. The multiple data items are encoded jointly using a second ECC, so as to produce a code word of the second ECC, and only a part of the code word is stored in the memory. The stored encoded data items are recalled from the memory and the first ECC is decoded in order to reconstruct the data items. Upon a failure to reconstruct a given data item from a respective given encoded data item by decoding the first ECC, the given data item is reconstructed based on the part of the code word of the second ECC and on the encoded data items other than the given encoded data item.

Error correction coding over multiple memory pages

Methods of operating nonvolatile memory devices include testing a plurality of strings of nonvolatile memory cells in the memory device to identify at least one weak string therein having a higher probability of yielding erroneous read data error relative to other ones of the plurality of strings. An identity of the at least one weak string may be stored as weak column information. This weak column information may be used to facilitate error detection and correction operations. In particular, an error correction operation may be performed on a first plurality of bits of data read from the plurality of strings using an algorithm that modifies a weighting of the reliability of one or more data bits in the first plurality of bits of data based on the weak column information. More specifically, an algorithm may be used that interprets a bit of data read from the at least one weak string as having a relatively reduced reliability relative to other ones of the first plurality of data bits.

Methods of Performing Error Detection/Correction in Nonvolatile Memory Devices

A decoding method includes performing a first decoding method and performing a second decoding method when decoding of the first decoding method fails. The first decoding method includes updating multiple variable nodes and multiple check nodes using probability values of received data. The second decoding method includes selecting at least one variable node from among the multiple variable nodes; correcting probability values of data received in the selected at least one variable node; updating the variable nodes and the check nodes using the corrected probability values; and determining whether decoding of the second decoding method is successful.

Decoding method and memory system device using the same

A nonvolatile memory device includes a memory block, a row decoder, a voltage generator and control logic. The memory block includes memory cells stacked in a direction intersecting a substrate, the memory block being divided into sub-blocks configured to be erased independently. The row decoder is configured to select the memory block by a sub-block unit. The voltage generator is configured to generate an erase word line voltage to be provided to a first word line of a selected sub-block of the sub-blocks and a cut-off voltage, higher than the erase word line voltage, to be provided to a second word line of the selected sub-block during an erase operation. The control logic is configured to control the row decoder and the voltage generator to perform an erase operation on the selected sub-block.

Nonvolatile memory device and sub-block managing method thereof

A method of operating a memory controller includes reading data from a first block of a memory device; detecting degraded pages from a plurality of pages of the first block and counting a number of the degraded pages in the first block; and recharging or reclaiming the first block, which includes the degraded pages, based on the counted number of the degraded pages.

Method of operating memory controller, and memory system, memory card and portable electronic device including the memory controller

A method of storing data in a storage media is provided which includes sequentially compressing data by a compression unit, and storing the compressed data in the storage media, the compression unit being varied according to a compression characteristic of data to be stored in the storage media.

Junjin Kong

Papers

Methods of Performing Error Detection/Correction in Nonvolatile Memory Devices

Decoding method and memory system device using the same

Nonvolatile memory device and sub-block managing method thereof

Method of operating memory controller, and memory system, memory card and portable electronic device including the memory controller

Method of storing data in storage media, data storage device using the same, and system including the same