Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations Methods of depositing copper layers using such copper plating baths are also disclosed

Plating bath and method

The present invention relates to a process for coating a surface of a substrate with a seed film of a metallic material, the said surface being an electrically conductive or semiconductive surface and having recesses and/or projections. The process comprises the following: an organic film is placed on the said surface, the said film having a thickness such that the free face of this film conformally follows the recesses and/or projections of the said electrically conductive or semiconductive surface on which it is placed; a precursor of the metallic material is inserted within the said organic film placed on the said surface at the same time as, or after, the step consisting in placing the said organic film on the said surface; and the said precursor of the metallic material inserted within the said organic film is converted into the said metallic material. This process allows integrated circuits, interconnects in microelectronics and microsystems to be fabricated.

Surface-coating method, production of microelectronic interconnections using said method and integrated circuits

A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.

Ferromagnetic Material Sputtering Target

Electroless copper and copper alloy plating baths are disclosed. The electroless baths are formaldehyde free and are environmentally friendly. The electroless baths are stable and deposit a bright copper on substrates.

Environmentally friendly electroless copper compositions

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

RF power transistor circuits

A method for metal plating which comprises admixing or reacting a noble metal compound as a catalyst with a silane coupling agent containing a functional group having the capability of capturing a metal, to thereby prepare a pre-treating agent, subjecting an article to be treated to the surface treatment with the pre-treating agent, and then subjecting the pre-treated article to electroless plating. The method permits the preparation without fail of metal-plated products also from a powder, a resin cloth and an article having a mirror surface such as a semiconductor wafer, which have been difficult to be metal-plated conventionally. Moreover, the employment of the method in fine wiring on the surface of a semiconductor wafer leads to the satisfactory coverage of a seed layer onto the inner wall of a via trench. As the silane coupling agent, a compound having an azole group, in particular, imidazole group is suitably used.

Method for metal plating, pre-treating agent, and semiconductor wafer and semiconductor device using the same

Resin cloths, powders, specular bodies and other objects resistant to conventional plating can be plated with metals by a simple method According to the metal plating method of the present invention, electroless plating is performed after the surface of a object to be plated is treated with a pretreatment agent obtained by reacting or mixing in advance a noble metal compound (catalyst) with a silane-coupling agent having functional groups capable of capturing metals According to this method, metal plating can be securely applied to powders, resin cloths, semiconductor wafers, and other specular bodies Moreover, the problem of the insufficient coverage of the seed layer on the inside walls of vias and trenches during the formation of fine wiring can be addressed by applying this method to semiconductor wafers The silane-coupling agent may be a compound containing azole groups, preferably an imidazole

Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these

A method of electroless plating, which comprises applying a silane coupling agent having a functional group capable of capturing a metal, further applying a solution in an organic solvent of a palladium compound such as palladium chloride, and then performing an electroless plating. The method allows the preparation of a semiconductor wafer having an electroless plating layer which is thin, uniform and smooth, is formed with good adhesiveness, and further is suitable also as a seed layer. Specifically, a semiconductor wafer having a film thickness of 70 to 500 A and an average surface roughness (Ra) of 10 to 100 A can be prepared.

Method of electroless plating and semiconductor wafer having metal plating layer formed thereon

A plating solution for electroless copper plating which is suitable for improving deposit film adhesion and with which an even deposit can be formed at low temperatures. The plating solution for electroless copper plating is characterized by containing a water-soluble nitrogenous polymer therein. The plating solution for electroless copper plating preferably further contains glyoxylic acid and a phosphinic acid as reducing agents. The water-soluble nitrogenous polymer preferably is polyacrylamide or polyethyleneimine each preferably having a weight-average molecular weight (Mw) of 100,000 or higher and an Mw/Mn of 10.0 or lower.

Plating solution for electroless copper plating

An object is to provide an electroless copper plating solution that realizes uniform plating at lower temperatures, when the electroless copper plating is performed on a semiconductor wafer or other such mirror surface on which a plating reaction hardly occurs. An electroless copper plating solution, wherein, along with a first reducing agent, hypophosphorous acid or a hypophosphite is used as a second reducing agent, and a stabilizer to inhibit copper deposition is further used at the same time. Examples of the first reducing agent include formalin and glyoxylic acid, while examples of the hypophosphite include sodium hypophosphite, potassium hypophosphite, and ammonium hypophosphite. Examples of the stabilizer to inhibit copper deposition include 2,2′-bipyridyl, imidazole, nicotinic acid, thiourea, 2-mercaptobenzothiazole, sodium cyanide, and thioglycolic acid.

Junnosuke Sekiguchi

Papers

Method for metal plating, pre-treating agent, and semiconductor wafer and semiconductor device using the same

Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these

Method of electroless plating and semiconductor wafer having metal plating layer formed thereon

Plating solution for electroless copper plating

Electroless copper plating solution and electroless copper plating method