We review the present status of the rapidly developing field of semiconductor laser diodes based on self-organized quantum dots (QDs). Several milestones have been achieved since the first realization of such a device in 1994: above room-temperature cw operation, the lowest threshold current density of any semiconductor laser diode, high temperature stability, an extended wavelength range on GaAs substrate and high power operation. After a brief introduction we discuss the tremendous advances in epitaxial growth, device performance, and theoretical understanding of QD lasers. Three applications of large commercial interest are discussed in detail: 1300 nm QD lasers on GaAs substrate, QD surface emitting lasers, and high power QD lasers. Finally, we give an outlook on future developments.

The present status of quantum dot lasers

An apparatus for monitoring and controlling the wavelength of laser radiation includes at least one optical filter for receiving laser radiation and for transmitting and reflecting first and second filtered beams, respectively. Alternatively, the first and second beams may be transmitted by separate filters (32, 34). The beams are filtered according to respective first and second spectral filter functions that cross at least one crossing wavelength. A beam comparison element (20) compares the first and second filtered beams (36,38) and produces an error signal (22) representative of the deviation of the wavelength of the laser radiation from a set-point wavelength. The beam comparison element (20) can include first and second optical detectors (40, 42) and error signal (22) by taking a ratio or the difference of the signals detected by the detectors. Varying the angle of incidence of the laser radiation upon at least one optical filter varies the spectral filter function of that filter for selecting or varying the operating wavelength of the laser (12). A laser wavelength controller (24) can receive the error signal (22) for stabilizing or tuning the wavelength of the laser radiation. Several embodiments of the invention are disclosed.

Method and apparatus for monitoring and control of laser emission wavelength

An integrated optical transmitter for use in an optical system has an optical head assembly with an optical beam generator for providing an optical beam and a lens assembly collecting the optical beam and generating therefrom a formed optical beam. Interface optics receive the formed optical beam and provide optical coupling so as to minimize insertion loss to the optical beam. Also included is an optical modulator for receiving the optical beam from the interface optics and for providing a modulated optical beam in response to received modulation signals. The optical modulator is coupled to the interface optics to be in a fixed relationship therewith.

Integrated wavelength-select transmitter

This paper emphasizes methodology concerning variations of the emission wavelengths of edge-emitting semiconductor lasers. We present a method based on tilted distributed feedback (DFB) gratings to be used in combination with specially bent or tilted straight waveguides for the low-cost and ultraprecise definition of different wavelength channels in lasers for Dense wavelength division multiplexing (DWDM) fiberoptic communication systems. The homogeneous DFB grating field is defined using low-cost processes and is tilted with respect to a preferential direction defined by the device borders or the crystal geometry. Our method allows ultraprecise definitions of the DWDM wavelengths and is applicable index- and complex-coupled DFB gratings in both isolated lasers and arrays. Design, technological implementation, and experimental characterization of the devices is presented in this paper. Thin-film heaters are used for correcting small wavelength deviations occurring due to technologically induced tolerances.

Low-cost edge-emitting DFB laser arrays for DWDM communication systems implemented by bent and tilted waveguides

A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20° down to 11° and threshold current density of less than 131 A/cm2 can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given...

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

The characteristics of loss-coupled distributed feedback (DFB) semiconductor laser arrays are investigated both theoretically and experimentally. Using simulations based on a transfer matrix method, the strong influence of the residual facet reflectivity on the singlemode yield and the statistical fluctuation of the emission wavelength for as-cleaved and AR/HR coated loss-coupled DFB lasers is pointed out and compared to purely index-coupled /spl lambda//4 phase-shifted devices. Experimental results and the fabrication techniques are given for loss-coupled 1.55 /spl mu/m InGaAs/InGaAlAs/InP DFB laser arrays with four channels and integrated striped thin-film heaters, which were successfully used for fine tuning the channel spacings.

Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

Optical waveguiding in an InGaAs/GaAs strained-layer distributed feedback (DFB) quantum well laser is investigated using the one-dimensional shooting method presented. The numerical approach is used to optimize the waveguide geometry and to calculate the corrugation period and the coupling factor for the integrated Bragg grating. The quantum well DFB structure designed according to the numerical calculations for an emission wavelength of 982 nm was realized for the first time entirely by molecular beam epitaxy (MBE) growth. Thus, side-mode suppression ratios of 49 dB, threshold currents of 7 mA and quantum efficiencies of 0.4 mW/mA were achieved. >

K. Dahlhof

Papers

Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

Design and realization of InGaAs/GaAs strained layer DFB quantum well lasers