Experiments on surface tension driven flow in floating zone melting

Convective effects in crystals grown from melt

The formation of swirl defects in silicon by agglomeration of self-interstitials

Melting and solidification of a metal system in a rectangular cavity

The bulk single crystab of semiconductors (e.g. Si, GaAs) and oxides which are at present commercially produced have mostly non-uniform properties in the microscale (e.g. doping striations) and in the macroscale (longitudinal and lateral segregation). Such inhomogeneities are deleterious for the performance of the devices produced from these crystals. This book gives a review of the various origins of inhomogeneities occuring during crystal growth from the melt. It is shown that convection is the major source of the non-uniformities in the technically used growth configurations, e.g. Czochralski-, zone- and Bridgman-methods, because the growth rate is controlled by the heat transport. The formalism of hydrodynamics, especially dimensionless numbers, is used for a modeling of melt growth, giving a correlation between the occurrence of inhomogeneities and relevant growth parameters.

K. Morizane

Papers

Impurity Distribution in Single Crystals III . Impurity Heterogeneities in Single Crystals Rotated during Pulling from the Melt

Impurity Distributions in Single Crystals I . Impurity Striations in Nonrotated Crystals

Impurity Distribution in Single Crystals IV . Growth Characteristics and Impurity Incorporation During Facet Growth