Iris plays a vital role in human life for object identification. Many models and techniques were proposed and suggested for detecting the Iris, but the accuracy was not achieved up to the level and its frequently used for biometric application. The Proposed Work divided into two steps, at first, we detect the entire eye region outer layer by using mathematics first order derivatives by applying combinations of canny edge detection and circular hough transform. The next, we detect the inner portion of eye region that is Iris region is detected by combination of sobel edge detector and circular hough transform, As the results thereby reducing the error rate, marking the edges closest to the actual edges for maximizing the localization, indicating edges and also detect the inner and outer layer of the eye portions accurately. Finally this process is applied for cerebral palsy Children to detect the misalignment of eye and obtain the deviation position and results are compared with normal children eyes. In this context, image processing techniques are being recommended as a performance evaluation tool in cerebral palsy kids.

Distance-Based Method Used to Localize the Eyeball Effectively for Cerebral Palsy Rehabilitation

Micro-electromechanical systems (MEMS)-based devices comprise suspended structures. A sacrificial layer is required to realize these structures. Usually, metal and dielectric materials are used as sacrificial layer materials. Metallic sacrificial material has a selectivity problem, whereas dielectric materials require higher deposition temperatures. Hence, in the present paper, photoresist (PR) material is used as the sacrificial layer. PR requires low-temperature processing and has no selectivity issues. Hence, photoresists are preferred as sacrificial layer materials. In the CMOS fabrication process, thin photoresists such as S1818, S1813, and AZ1505 are used. In these photoresists, the processing wafers are placed in a vertical position during patterning, which occupies less space. The recipes of such photoresists are well optimized for a uniform thickness across the wafer. However, special thick photoresists are used as a sacrificial layer for MEMS devices. These thick photoresists reflow in the vertical position and lead to non-uniform thickness; consequently, the yield is decreased. This paper has optimized a special thick photoresist (HiPR 6517) for RF MEMS SPST switches for better yield and uniformity. The measured pull-in voltage and the switch's resonant frequency are 13.00 V and 12.32 kHz, respectively. The fabricated switch offers isolation and insertion loss better than − 35 dB and − 1 dB at 24.5 GHz, respectively.

Optimization of Thick Photoresist for Uniform Thickness in RF MEMS Applications

Design and optimization of a novel high isolation low insertion loss RF MEMS single-pole double-throw switch

RF micro-electro-mechanical system (MEMS) capacitive switch performance parameters and improvement strategies

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than ź0.6 dB and ź20 dB, respectively, for 1 GHz to 20 GHz applications.

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Kamljit Rangra

Papers

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch