A workpiece to be treated including aluminum or an aluminum alloy on at least a surface thereof is subjected to surface treatment by a method including the steps of immersing in an acidic or alkaline aluminum oxide film-removing solution containing a salt or oxide of a metal capable of substitution with aluminum and forming a substituted metal layer of the metal which is capable of substitution with aluminum and is contained in the removing solution on a surface of the aluminum or aluminum alloy while removing an aluminum oxide film on said aluminum or aluminum alloy surface, forming a substituted zinc film by zinc substitution treatment without removal of the substituted metal layer, removing the substituted metal layer along with the substituted zinc film by means of a liquid having an oxidizing behavior, and subjecting again to zinc substitution treatment to form a substituted zinc film. A plated layer is formed on the aluminum or aluminum alloy on which the substituted zinc film has been formed to obtain good adhesion between the aluminum or aluminum alloy surface and the plated layer.

Method of surface treatment for aluminum or aluminum alloy

PROBLEM TO BE SOLVED: To provide a method where, when an electroless nickel plating film is formed on aluminum or an aluminum alloy, and the surface of the aluminum or aluminum alloy is treated, the surface of the aluminum or aluminum alloy can be treated in such a manner that the generation of cracks in the plating is not caused, and further, the warpage of a silicon wafer is suppressed as possible. SOLUTION: An electroless nickel plating film is formed on aluminum or an aluminum alloy through a stage where an aluminum oxide film formed on the surface layer of aluminum or an aluminum alloy is removed, so as to form a first electroless nickel plating film; and a stage where a second electroless nickel plating film is formed on the surface of the first electroless nickel plating film. COPYRIGHT: (C)2008,JPO&INPIT

Surface treatment method for aluminum or aluminum alloy

The invention discloses a high-stability palladium catalyst concentrated solution. The high-stability palladium catalyst concentrated solution comprises the following components: 2 to 8g/L of palladium chloride, 0 to 100ml/L of hydrochloric acid, 100 to 200g/L of sodium chloride, 200 to 350g/L of stannous chloride, 5 to 40g/L of sodium stannate, 5 to 5g/L of vanillic aldehyde, 1 to 5g/L of ascorbic acid, and the balance of deionized water. According to the preparation method, the sodium chloride is adopted to replace hydrochloric acid, so that the chloridion reduced due to the volatilizing of the hydrochloric acid is reduced, and as a result, the divalent tin can be protected well, and the stability of active particles of palladium ions can be improved; and the vanillic aldehyde, the ascorbic acid and the malic acid can be determined to be added by sieving, so that the stability of the palladium catalyst can be further improved.

High-stability palladium catalyst concentrated solution and preparation method thereof

PROBLEM TO BE SOLVED: To provide a semiconductor device having improved reliability by preventing peeling between a barrier metal and a conductive layer. SOLUTION: The semiconductor device X1 includes: a semiconductor substrate 10; a conductive layer 20 provided on the semiconductor substrate 10; a passivation layer 30 having a through-hole 30a on the conductive layer 20; a barrier metal 40 having one part disposed in the through-hole 30a and provided on the conductor layer 20; and a solder bump 50 joined to the barrier metal 40. The conductive layer 20 includes a first layer 21 and a second layer 22 on the first layer 21, wherein the second layer 22 has a through-hole 22c communicating to the through-hole 30a. The barrier metal 40 has a protrusion 40a extending outward from the inner peripheral surface 22c 1 of the through-hole 22c in the lower part of the second layer 22. COPYRIGHT: (C)2009,JPO&INPIT

Semiconductor device and mounting structure of the semiconductor device

The purpose of the present invention is to provide a technology that is capable of suppressing contamination of a semiconductor substrate having a nickel film arranged thereabove. This semiconductor apparatus is provided with: a semiconductor substrate; an aluminum alloy film that is arranged on the obverse surface and/or the reverse surface of the semiconductor substrate; a catalyst metal film that has a catalytic activity allowing autocatalysis for nickel deposition and that is arranged above the aluminum alloy film; an electroless nickel-plating film that is arranged on the catalyst metal film; and a reaction product layer that includes the metal of the catalyst metal film and that is arranged between the aluminum alloy film and the catalyst metal film.

Semiconductor apparatus and method for manufacturing semiconductor apparatus

PROBLEM TO BE SOLVED: To provide an electroless plating method in which conventional defects attributable to zincate treatment are solved, solution of Al or an Al alloy is small, no nodule is generated, and a plating film of uniform thickness can be obtained, and a palladium catalyst used therefor SOLUTION: Surface of Al or an Al alloy is activated, thereafter, is surface-treated with any one of a palladium solution using palladium sulfide, palladium nitride, and palladium ammine, and electroless nickel plating and substitution type gold plating are performed Concentration of palladium in the palladium solution is preferably 0005-20 g/L If the concentration of palladium is ≥ 10 g/L, it is preferably to add to the palladium solution organic acid and organic acid salts such as citric acid and citrate, malic acid and salts thereof, lactic acid and salt thereof, or a chelating agent such as salts of amino acid such as glycine and alanine, ethylene diamine and salts thereof, and amines such as ethanolamine COPYRIGHT: (C)2006,JPO&NCIPI

Kaneko Tadashi

Papers

Electroless plating method on aluminum surface, and catalyst for electroless plating