A semiconductor light-emitting device of the present invention includes a nitride type alloy semiconductor layer. The nitride type alloy semiconductor layer is made of Al a Ga b In 1-a-b N (0≦a≦1, 0≦b ≦1, a+b≦1) including at least one selected from the group consisting of Sc, Ti, V, Cr, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

Semiconductor light-emitting device

VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, and a half cross section in which the nonconductive oxidized layer does not appear is present among radial half cross sections extending from a substantial center of the current injection opening area to an outer periphery of the surface emitting laser, which cross sections are interrupted within a region where a laser emitting light is present.

Surface emitting laser

When a laser light source module is configured to include a heat sink in which a solid laser element, an excitation light source, and a wavelength conversion element are arranged and a stem that supports the heat sink, the heat sink is separated into three blocks, which are a first block on the top surface of which a laser oscillating unit for the solid laser element is arranged, a second block on the top surface of which a semiconductor laser element that emits excitation light for the laser oscillating unit and a first temperature sensor are arranged and on a specific surface of which the first heater is arranged, and a third block on the top surface of which the wavelength conversion element that converts the wavelength of the fundamental laser beam oscillated by the laser oscillating unit and a second temperature sensor are arranged and on a specific surface of which a second heater is arranged. Only the second block is fixed at its side surface or bottom surface to the stem, the first block is fixed to the other side surface of the second block, and the third block is fixed to the side surface of the first block. The module can thereby be downsized, and the positioning accuracy of the elements can be improved.

Laser light source module

A laser landscape lighting apparatus for use in accent lighting applications for landscapes and outdoor venues. In one embodiment, the laser landscape lighting apparatus includes a coherent light source in combination with a diffractive optical element and optionally a diffraction grating wheel. The diffractive optical element may be, for example, a holographic optical element. In some embodiments, the laser landscape lighting apparatus includes a temperature-controlled integral derivative system. In one application, the laser landscape lighting apparatus may project a static or movable star field.

Laser landscape lighting apparatus

A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate 1 an n-type cladding layer 3, active layer 4 and p-type cladding layer including an upwardly projecting stripe portion 53, an n-type current blocking layer 6 being formed at each of opposite sides of the stripe portion 53. The stripe portion 53 of the p-type cladding layer 5 comprises an upper stripe portion 51 and a lower stripe portion 52. The upper stripe portion 51 has a minimum width W1 at the position of the boundary between the upper and lower stripe portions 51, 52, and the lower stripe portion 52 has at the position of its lower end a width W2 greater than the minimum width W1 of the upper stripe portion 51. This construction realizes a higher yield than in the prior art.

Nitride semiconductor laser device

PURPOSE:To manufacture a semiconductor laser device which can effectively suppress its deterioration caused by the heat produced at the light emission edge of the device due to surface re-coupling by forming a film containing S to the end face provided with an AlGaAs active layer so as to largely reduce the surface level of the edge. CONSTITUTION:A laminated body 12 containing an AlGaAs active layer is made to grow on a semiconductor substrate 11 and resistive electrodes 13 and 14 are formed on both surfaces of the body thus formed. Then bars 15 respectively constituted of a plurality of resonator units arranged in the direction perpendicular to the direction of the resonators are formed by cutting the body along the cleavage of the body. Immediately after the cutting, the bars 15 are dipped in, for example, the 10% aqueous solution 20 of (NH4)2S for a period of specific minutes at a room temperature so as to make surface treatment on the cut surface. As a result, films 18 containing S are respectively formed on the edges of the bars 15. Then a reflecting film 17 of an Al2O3 film and another reflecting film having a multilayered structure of Al2O3 and amorphous Si and having a reflectivity of, for example, 95% are respectively formed on the surface- and rear-side edges of each bar 15 after the bar 15 is washed with water and dried. Thereafter, each bar 15 is further cut into pieces and semiconductor laser devices are obtained.

Semiconductor laser device and manufacture thereof

PURPOSE:To obtain an external resonator type semiconductor laser device whose stable temperature range can be widened and that prevents loosing reliability by using a mounting member of an alloy of copper and tungsten. CONSTITUTION:A mounting member is made of an alloy of Cu and W (Cu-W alloy). The Cu thermal expansion coefficient is 17.0X10 / deg.C and the heat conductivity is 0.9cal/cm. deg.C. While, the W thermal expansion coefficient is 4.5X10 / deg.C and the heat conductivity is 0.40cal/cm. deg.C, and the both thermal expansion coefficient and heat conductivity are smaller than those of Cu. Therefore, the both thermal expansion coefficient and heat conductivity of the mounting member are set at the values middle of those of Cu and W. Namely, such thermal expansion coefficient is smaller than that of Cu and the heat conductivity is larger than that of W. Since the thermal expansion coefficient of the mounting member becomes smaller than that of Cu, the temperature coefficient dl/dT of an external resonator length l becomes small. Therefore, the temperature coefficient dlambdae/dT of an external mode lambdae becomes small by the expression, and as a result, the temperature coefficient dlambda/dT of a peak wavelength (lambda) becomes small. Therefore a stable temperature range T is widened and the mounting member can be set to have the larger heat conductivity compared with the case the member is made of W.

External resonator type semiconductor laser device

PROBLEM TO BE SOLVED: To manufacture plural optical element parts such as a semiconductor laser or an optical waveguide in the same crystal growth process, and to prevent any layer interrupting optical connection from being present among the optical element parts. SOLUTION: An integrated optical circuit element is provided with a first optical element part (semiconductor laser part) 10 including first and second element areas 310 and 320 layered in a layer thickness direction, second optical element part (optical waveguide part) 30 formed at a position separated from the first optical element part 10, and multi-mode interfering area 20 having an embedded part 114 formed in the propagating direction of a light positioned between the first optical element part 10 and the second optical element 30. In this case, the first optical element part 10 is optically connected through the multi-mode interfering area 20 with the second optical element part 30.

Integrated optical circuit element and manufacture of the same

PURPOSE:To realize an optical heterodyne detection system and the detector by which a beat signal is efficiently detected regardless of an angular deviation of wave fronts of a signal light and a reference light, no mechanical adjustment due to the angular deviation is required and the system is made small. CONSTITUTION:A reference light 72' is diffused by a diffusion plate 7 to obtain a diffused reference light 72. The diffused reference light 72 is regarded as a set 75 of plane waves in various directions. Since a component whose wave front is coincident with that of a signal light 76 is in existence in the diffused reference light 72, a beat signal is detected from the mixed light.

Optical heterodyne detection system and detector

PURPOSE:To attain wireless transmission of a high definition animation or the like by providing a wavelength tuning means controlling a wavelength of a local oscillating light so that a difference between a reference wavelength of a signal light and the wavelength of the local oscillation light is a prescribed wavelength to the transmitter. CONSTITUTION:A sender side is made up of a wavelength variable semiconductor laser 10 generating local oscillating lights whose reference wavelengths are lambda0, lambda1 while switching them digitally, a control circuit 11 controlling its oscillating intensity and the wavelengths, and a laser beam radiation window 12. A receiver side is provided with a polarization filter 13 converting a signal light into a linearly polarized light, a filter 14 cutting off most of in-room lighting and the sun ray and filtering only a wavelength region of the signal light, a lens 15 collecting the signal light, a reference wavelength coherent light local oscillating semiconductor laser 16, a light receiving element 17 mixing the lights and detecting a beat signal of them, and a signal processing circuit 18 amplifying and shaping its output and demodulating the signal. The signal light and the local oscillation light are mixed, the mixed light is photoelectric-converted, its AC component is frequency-discriminated and the signal is reproduced from its output in this way.

Kasai Shusuke

Papers

Semiconductor laser device and manufacture thereof

External resonator type semiconductor laser device

Integrated optical circuit element and manufacture of the same

Optical heterodyne detection system and detector

Optical space transmitter