An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.

Method for Fabricating Semiconductor Device

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.

Semiconductor structure and manufacturing method thereof

PROBLEM TO BE SOLVED: To comparatively easily manufacture a non-volatile memory cell capable of byte rewriting, having an excellent tolerance of rewriting, and being a multi-storage configuration. SOLUTION: On a first semiconductor area (30), a memory gate electrode (33) is formed via a gate insulation film (31) and gate nitride film (32). On both sides thereof, a first and second switch gate electrodes (36, 37) and first and second signal electrodes (38, 39), that are source/drain electrodes, are formed and a non-volatile memory cell is constituted. Then, with the memory gate electrode being a mask, a high concentration impurity is introduced into the first semiconductor area just under the memory gate electrode. COPYRIGHT: (C)2008,JPO&INPIT

Method of manufacturing semiconductor device

PROBLEM TO BE SOLVED: To solve such a problem that read and write cycles of a memory cell takes double time when a memory cell in which two bits/cell is stored is used and to provide a peripheral control circuit having memory array constitution in which area can be reduced SOLUTION: Each memory is connected through a common bit line in which two cells are a drain or a source, and a memory array is constituted by arranging a plurality of unit memory arrays of this two cells And write or read can be performed by simultaneous one time access for a plurality of bites by replacing bit arrangement of a memory cell array by a write method or a read method Also, operation speed is increased by providing a sensor amplifier which is not pre-charged as further increasing read speed

Non-volatile semiconductor memory

PROBLEM TO BE SOLVED: To achieve capacity increase and miniaturization of on-chip nonvolatile memory which is utilized to store data and programs. SOLUTION: This semiconductor processor has a first nonvolatile memory (21) in which memory information is erased in first data length; a second nonvolatile memory (22) in which memory information is erased in second data length; and a CPU (2). The first nonvolatile memory is used to store an encryption key to be used for encryption of data and the second nonvolatile memory is used to store a program which the CPU should process. Since the nonvolatile memory is divided into two parts for storing programs and for storing encryption keys and the data length of erasure unit of memory information to each nonvolatile memory is specified separately, the efficiency of erasure of memory information before write processing of program can be increased and erasure of memory information can be performed according to the data length of required processing unit in writing the encryption key to be utilized for arithmetic operation of the CPU. COPYRIGHT: (C)2009,JPO&INPIT

Katayama Kozo

Papers

Method of manufacturing semiconductor device

Non-volatile semiconductor memory

Semiconductor processor and ic card