K
Katsue Kawakyu
Researcher at Toshiba
Publications - 25
Citations - 260
Katsue Kawakyu is an academic researcher from Toshiba. The author has contributed to research in topics: MESFET & Amplifier. The author has an hindex of 10, co-authored 25 publications receiving 260 citations.
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Patent
High frequency switch device, front end unit and transceiver
TL;DR: In this paper, a high frequency switch device is characterized in which a first control signal is applied to a gate of the first FET (11) via a resistance (31), a second control signal was applied to gate of a second FET(12), and the third terminal (6) was connected to a common junction point between the first and second circuits.
Patent
High frequency switching circuit
TL;DR: In this paper, a high frequency switching circuit with a variable resistance circuit is presented, which is connected between the gate of the field-effect transistor and the control terminal of the high frequency signal.
Patent
High-frequency switching device incorporating an inverter circuit
Katsue Kawakyu,Kaneta Naotaka +1 more
TL;DR: A high frequency switching device includes a control terminal, a power source, a GND terminal, an RF terminal, switch section, a control section, and protecting diodes.
Proceedings ArticleDOI
A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system
Katsue Kawakyu,Yoshiko Ikeda,Masami Nagaoka,K. Ishida,A. Kameyama,Tomohiro Nitta,M. Yoshimura,Yoshiaki Kitaura,N. Uchitomi +8 more
TL;DR: In this paper, a GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System in the 1.9 GHz band.
Patent
Semiconductor memory device employing normally-on type GaAs-MESFET transfer gates
TL;DR: In this paper, a GaAs-MESFET is used for a single-input single-output (SIMO) memory device with a single power supply, where the memory cells are connected in a matrix form by employing a plurality of bit lines and of word lines.