In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

System and method for lithography simulation

A rule-based OPC evaluating method and a simulation-based OPC model evaluating method for accurately evaluating line width controllability are disclosed. Mask pattern design data about an evaluation-use mask are input to rule-based OPC to obtain correction data about the mask pattern on the evaluation-use mask. An evaluation-use wafer is fabricated based on the correction data thus acquired. Gate patterns on the evaluation-use wafer are measured for size. Based on a simulation-based OPC model having undergone process calibration, simulation data are output corresponding to all gate patterns on the evaluation-use wafer. The measured data about the evaluation-use gate patterns are compared with the simulation data, whereby the rule-based OPC is evaluated.

Rule based OPC evaluating method and simulation-based OPC model evaluating method

A method for separating an original circuit pattern to be printed on a wafer, into multiple circuit patterns is disclosed. Simulation to obtain an image log-slope (ILS), normalized image log-slope (NILS), or any other characteristic of an image quality on edges of polygons in the circuit pattern obtained from circuit pattern data is performed. Properly printed edges and not-properly printed edges are identified according to a criterion of an ILS level. The original circuit pattern is separated into multiple circuit patterns such that each of the multiple patterns does not have any not-properly printed edges.

Apparatus and method for separating a circuit pattern into multiple circuit patterns

A method of manufacturing a mask includes designing a second mask data pattern for forming a first mask data pattern, creating a first emulation pattern, which is determined from the second mask data pattern, using a first emulation, creating a second emulation pattern, which is determined from the first emulation pattern, using a second emulation, comparing a pattern, in which the first and second emulation patterns overlap, with the first mask data pattern, and manufacturing a mask layer, which corresponds to the second mask data pattern, according to results of the comparison.

Method of manufacturing mask

This at least comprises: a first step of capturing an image of a fine pattern; a second step of extracting a contour of the fine pattern from the image; a third step of capturing a standard figure of the fine pattern; a fourth step of superimposing the standard figure on the contour by enlarging or reducing the standard figure while maintaining an aspect ratio thereof; a fifth step of extracting an intersection of the contour and the standard figure; a sixth step of extracting a differential region surrounded with the contour, the standard figure and the intersection; a seventh step of extracting a correction pattern region from the differential region; and an eighth step of measuring the correction pattern region.

Method for measuring fine pattern, apparatus for measuring fine pattern, and record medium that can store therein program to measure fine pattern and can be read by using computer

PROBLEM TO BE SOLVED: To provide a photomask pattern design apparatus and design method by which mask patterns subjected to optimization to improve fine processing accuracy are obtd. and a recording medium recorded with a photomask pattern design program. SOLUTION: The CAD pattern data read in a step S1 is subjected to a design rule check in a step S2 and the pattern part to be subjected to light intensity simulation is extracted. The data conversion from the CAD pattern data extracted in a step S3 to a raster type is executed and the light intensity simulation is executed in a step S4. A contour-line pattern of a prescribed value is thereafter extracted from the numerical data obtd. as a result of the light intensity simulation in a step S5 and this contour-line pattern and the CAD pattern data read in the step S1 are superposed on each other in a step S6. The design rule check is then executed and the point requiring correction is extracted. This point requiring correction is corrected in a step S7. COPYRIGHT: (C)1999,JPO

Photomask pattern design apparatus and design method as well as record medium recording photomask pattern design program

PROBLEM TO BE SOLVED: To provide a photomask pattern design support apparatus capable of rapidly executing information feedback of pattern correction, etc., by efficiently executing the light intensity simulation of an enormous amt. of mask patterns by parallel processing usign plural arithmetic processors, a method therefor and a recording medium recording a design support program. SOLUTION: The mask pattern data of the LSI circuit pattern data and mask pattern data inputted from a CAD apparatus are divided to plural pattern regions (system S1) and is converted to a simulation data system (step S2). The converted simulation data are distributed to the plural arithmetic processors (step S3). The pattern data based on the simulation results calculated by the arithmetic processors and the inputted LSI circuit pattern data described above are compared and evaluated (step S6).

Photomask pattern design support apparatus, photomask pattern design support method and recording medium recording photomask pattern design support program

Katsuyuki Mitsuyoko

Papers

Photomask pattern design apparatus and design method as well as record medium recording photomask pattern design program

Photomask pattern design support apparatus, photomask pattern design support method and recording medium recording photomask pattern design support program