K
Kavindra Kandpal
Researcher at Indian Institute of Information Technology, Allahabad
Publications - 58
Citations - 263
Kavindra Kandpal is an academic researcher from Indian Institute of Information Technology, Allahabad. The author has contributed to research in topics: Threshold voltage & Thin-film transistor. The author has an hindex of 7, co-authored 39 publications receiving 115 citations. Previous affiliations of Kavindra Kandpal include Birla Institute of Technology and Science.
Papers
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Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies
Kavindra Kandpal,Navneet Gupta +1 more
TL;DR: In this article, the authors presented the investigations on high-κ dielectrics for low operating voltage and low leakage zinc oxide thin film transistor (ZnO TFT) using three material selection methodologies namely Ashby, technique for order preference by similarity to ideal solution (TOPSIS), and VlseKriterijumska Optimizacija I Kompromisno Resenjein in Serbian (VIKOR).
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Effect of thickness on the properties of ZnO thin films prepared by reactive RF sputtering
TL;DR: In this paper, structural and electrical properties of ZnO thin film deposited by reactive RF sputtering at the room temperature, for thin film transistor (TFT) applications were reported. But, the results were limited to the case of 100, 200 and 800 nm layers.
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Perspective of zinc oxide based thin film transistors: a comprehensive review
Kavindra Kandpal,Navneet Gupta +1 more
TL;DR: In this paper, a comprehensive review on development and future trends in zinc oxide thin film transistors (ZnO TFTs) is presented, which highlights the need of high-k dielectrics for low leakage and low threshold voltage in ZnOTFTs.
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Design of threshold voltage insensitive pixel driver circuitry using a-IGZO TFT for AMOLED displays
Aditya Sodhani,Kavindra Kandpal +1 more
TL;DR: A novel amorphous-indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) based pixel driver circuitry to compensate for threshold voltage variations of TFTs and OLED current degradations for AMOLED displays.
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Study of ZnO/BST interface for thin-film transistor (TFT) applications
TL;DR: In this article, the potential use of (Ba,Sr)TiO3 as a gate-dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation was investigated.