To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Semiconductor display device

An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Semiconductor device and method for manufacturing the semiconductor device

The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.

Thin film transistors

Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described

Patterns of electrically conducting polymers and their application as electrodes or electrical contacts

In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate on which the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. The semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit that has a thickness substantially equivalent to an interval between the substrates which is formed by the spacers.

Method for producing display device

PURPOSE:To suppress leak current of a field effect transistor, thereby reducing the power consumption when the transistor is off, by providing the field effect transistor with the function of excluding a crrier from the channel forming area when the field effect transistor is off. CONSTITUTION:Polycrystalline silicon film 9 is connected to a power supply. Since film 9 is electrically connected also to polycrystalline silicon film 11, the same voltage as that of the power supply is applied through film 11 to channel forming area 12. Accordingly, when a p-type MOS transistor 21 is off, to the area 12 a positive voltage is applied, holes in area 12 all flow into drain area 13, and, as a result, the drain area 13 becomes empty of holes, thereby being able to suppress leak current between the source area 14 and the drain area 13.

Kawai Akira

Papers

Field effect transistor