The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

Because a bypass circuit BP connected in parallel with serial paths of first and second storage circuits MF and SF has less serially-connected stages of gates incorporated therein than the storage circuits and has shorter information transfer delay of input data to an output terminal 21 than the storage circuits, the bypass circuit BP outputs the information to the output terminal before the outputs of the storage circuits are determined when data supplied to a data input terminal 20 is fetched synchronously with a clock signal CK The first and second storage circuits MF and SF are master/slave-operated in diagnosis mode, and the output operation of the bypass circuit BP is inhibited according to the states of signals C1 and C2 for controlling their master/slave operations regardless of the clock change of the first control signal CK Thus, the master/slave operations of the first and second storage circuits MF and SF are assured in the diagnosis mode

Circuit having a master-and-slave and a by-pass

PURPOSE:To remarkably miniaturize a device by adjusting the angle of spray of a spray nozzle in response to the quantity of spray water and the flow rate of a gas and changing a spray pattern. CONSTITUTION:Exhaust gas flowing into an exhaust-gas desuperheater flows toward an upper section from the lower section of a gas-temperature reducing tower 5. Water, etc., are atomized into the gas through a valve 10b, opening and closing of which are controlled by the signal of a temperature detector 10a, from an atomizer 7 disposed to the lower section of the gas-temperature reducing tower 5. Consequently, the temperature of exhaust gas is held at a fixed value. The quantity of heat of exhaust gas is arithmetically operated from the flow rate and temperature of exhaust gas, and the angle of spray of the atomizer 7 is increased through a spray pattern controller 8 when an arithmetic value augments. The state of side-angle spray is brought, and a travel to an upper section until atomized particles are vaporized completely is shortened. When the arithmetic value of the quantity of heat of exhaust gas decreases, the angle of blowout is reduced, and the state of narrow-angle spray is brought. Accordingly, a travel in the horizontal direction until atomized particles are vaporized completely is shortened.

Exhaust gas temperature reducer and reducing method thereof

PURPOSE:To constitute the circuit of a small quantity of the circuit element and to make it into the circuit suitable to a high integration by constituting an edge trigger type flip-flop circuit of an inverter circuit and plural switches MOSFET to change the connecting condition of the inverter and shift the input data CONSTITUTION:For an edge trigger type flip-flop circuit, inverter circuits N1 and N2 to constitute the latch when a clock pulse CK is a high level and an inverter circuit N3 to constitute the latch with the inverter circuit N2 when the clock pulse CK is a low level are of the basic constitution A P channel MOSFET 11 and an N channel MOSFET Q1' are connected to the parallel mode, and functions as a switch MOSFET to input the inverting signal by an inverter circuit N0 of input data Din to the inverter circuit N1 To the gate of the P channel MOSFET Q1, the clock pulse is supplied, to the gate of the N channel MOSFET Q1', a clock pulse, the inverse of CK is supplied respectively, and when the clock pulse CK is a low level, both MOSFET are turned on

Kawashima Masatoshi

Papers

Flip-flop circuit