High refresh rate and low power consumption AMOLED panel using top-gate n-oxide and p-LTPS TFTs

High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering....

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.0 V; emit in the red, green and blue ranges; and reach, respectively, peak external quantum efficiencies of 19.6%, 24.6% and 11.8%, current efficiencies of 20.6 cd A–1, 90.1 cd A–1 and 27.1 cd A–1 and maximum luminance values of 9,833 cd m–2, 12,513 cd m–2 and 4,753 cd m–2. Our simulations demonstrate that the nano-pore permeable base electrode located at the centre of the device, which forms a distinctive optical microcavity and regulates charge carrier injection and transport, is the key to the good performance obtained. Our work paves the way towards efficient and low-voltage organic light-emitting transistors, useful for power-efficient active matrix displays and solid-state lighting. Vertical organic light-emitting transistors are realized by using a porous base electrode in the centre of the device, which improves efficiency and reduces operating voltage by regulating charge transport and forming an optical microcavity.

Efficient and low-voltage vertical organic permeable base light-emitting transistors.

High-performance vacuum-processed metal oxide thin-film transistors: A review of recent developments

Various memristor-based synaptic devices have been proposed for implementing a neuromorphic system. However, memristor devices typically suffer from various inherent problems such as nonlinearity a...

One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices

37-2: Development of high mobility top gate IGZO-TFT for OLED display.

Reliability improvement of IGZO-TFT in hybrid process with LTPS

24-1: Invited Paper: Development of High Quality IGZO-TFT with Same On-Current as LTPS

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Kazuatsu Ito

Papers

High refresh rate and low power consumption AMOLED panel using top-gate n-oxide and p-LTPS TFTs

37-2: Development of high mobility top gate IGZO-TFT for OLED display.

Reliability improvement of IGZO-TFT in hybrid process with LTPS

24-1: Invited Paper: Development of High Quality IGZO-TFT with Same On-Current as LTPS

[Paper] Automotive OLED Display with High Mobility Top Gate IGZO TFT Backplane