K
Kazuhide Hasebe
Researcher at Tokyo Electron
Publications - 165
Citations - 3398
Kazuhide Hasebe is an academic researcher from Tokyo Electron. The author has contributed to research in topics: Thin film & Silicon. The author has an hindex of 27, co-authored 165 publications receiving 3395 citations.
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Patent
Film formation method and apparatus for semiconductor process
TL;DR: In this article, a process gas supply system for a semiconductor process includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gaseous supply line configured to supply the mixture gas from the gas mixtures tank to a process field, and a second process gas circuit having a second gas supply circuit without passing through the gas mixture gas supply line.
Patent
Film formation apparatus
TL;DR: In this article, a gas supply mechanism for supplying an aminosilane-based gas, and a silanebased gas that does not include an amino group, is described, and the process of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on the bottom surface of opening by supplying the aminosileane-base gas into the process chamber, and forming a silicon film on the seed layer by providing the silane based gas that did not include the amino group into the event chamber, are sequentially performed in the process.
Patent
Film formation method and apparatus for forming silicon oxide film
TL;DR: In this paper, an oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas, including a silicon source gas and a second process gas including an oxidizing gas.
Patent
Formation method of fine pattern
Pao-Hwa Chou,Kazuhide Hasebe,Mitsuaki Iwashita,Shigeru Nakajima,Reiji Shinno,滋 中島,保華 周,光秋 岩下,礼二 新納,一秀 長谷部 +9 more
TL;DR: In this article, the problem of the formation of a fine pattern capable of forming a pattern having a width smaller than a resolution limit by a small number of manufacturing processes is addressed.
Patent
Mask pattern forming method, fine pattern forming method, and film deposition apparatus
TL;DR: In this article, a resist film is formed over a thin film, the resist film was processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film was formed on the thin film and the resist pattern after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygencontaining gas.