A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Laser package having multiple emitters configured on a support member

Fiber gratings ( 5 ), ( 6 ) having substantially the same reflection center wavelength are provided in an optical fiber ( 4 ) The fiber gratings ( 5 ), ( 6 ) reflects to the semiconductor laser element ( 1 ), only a component at the reflection center wavelength of laser light emitted from the semiconductor laser element ( 1 )

Semiconductor laser module

A technique is described for generating a Bessel beam. An input optical fiber is provided that supports propagation in the fundamental mode. The input fiber is connected to a fiber mode converting device that provides phase matching, at a predetermined excitation wavelength, between the fundamental mode and a selected azimuthally symmetric higher-order mode. As an input to the fiber mode converting device, a coherent light beam is fed through the input optical fiber to provide a fundamental mode input at the excitation wavelength. The fiber mode converting device resonantly excites the selected azimuthally symmetric mode. The azimuthally symmetric mode is provided as a beam output from an endface of the fiber mode converting device to approximate a Bessel beam.

Systems and Techniques for Generating Bessel Beams

A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Monitoring photodetector for integrated photonic devices

A pump laser diode (61) for providing improved stability at various operating temperatures is disclosed. It includes a Fabry-Perot cavity formed by laser facets (62, 65). Bragg Gratings or Fiber Bragg Gratings (FBG) (64) in a pump module are provided, wherein the optical mirror losses are made to increase for wavelengths longer than the required emission wavelength, thus permitting the diode to be locked to an emission wavelength while operating at different temperatures. A stack of materials (67) with different refractive indices is deposited on the back facet (65) of the laser diode to achieve a change in optical mirror losses over longer wavelengths.

Pump laser diode with improved wavelength stability

A laser module comprises a laser diode secured on a semiconductor substrate for emission of a forward laser beam from its front end and a backward laser beam from a point source on its rear end in a horizontal direction A photodiode, also secured on the substrate, has a light receiving surface extending in the horizontal direction by length L from an edge proximate to the laser diode for receiving a lower half of the backward laser beam, the light receiving surface being lower than the point source by a vertical distance Y, the edge being spaced a horizontal distance Z from the point source of the laser diode, wherein the horizontal distance Z is equal to or greater than (Y/tan θ)−L, where θ is a vertical angle in which the lower half of the backward laser beam radiates from the point source

Kazushige Mukaihara

Papers

Semiconductor laser module