An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

To provide a soft amorphous carbon exhibiting a low elastic modulus, an amorphous-carbon coated member provided with a coated film comprising the amorphous carbon, and a process for forming an amorphous carbon film The amorphous carbon comprises carbon as a major component and hydrogen in an amount of from more than 30 atomic % to 60 atomic % or less, and exhibits an elastic modulus of from 40 or more to 150 GPa or less Moreover, the amorphous-carbon coated member comprises a conductive substrate, and a coated film fixed on at least a part of a surface of the substrate and composed of the amorphous carbon In addition, in a process for forming the amorphous-carbon coated film, an amorphous carbon film is formed on a surface of conductive substrates by a plasma CVD method Not only a plurality of the substrates are disposed on a substrate holder, which is disposed in a film-forming furnace and is connected with a negative electrode, in such a state that they face to each other, but also a processing gas pressure and a plasma power source are operated so as to overlap negative glows of the neighboring two substrates

Amorphous carbon, amorphous-carbon coated member, and process for forming amorphous carbon film

Structural analysis of Si-containing diamond-like carbon

Probability of practical applications of the DLC-Si coating by DC-PACVD accompanied with the pre-treatment for improving adhesion strength was examined to numbers of small steel specimens with shapes of large-scale production parts. The whole surface of long narrow holes of 15 mm diameter 100 mm long were covered with the DLC-Si coating with enough thickness and high adhesion strength because of the uniform plasma-sheath formation at the inside holes. The coating was done on some hundreds of pins and rings with small spreads of coating thickness, silicon content, and adhesion strength. The process was concluded to have large probability for practical applications in the industry.

Investigation of DLC-Si coatings in large-scale production using DC-PACVD equipment

PROBLEM TO BE SOLVED: To provide an electroconductive amorphous carbon film, a method for forming such an amorphous carbon film, and an electroconductive member comprising such an amorphous carbon film. SOLUTION: The amorphous carbon film comprising carbon and hydrogen has a hydrogen content of not more than 30 at% (excluding 0 at%) and has an sp 2 -hybridized carbon content of not less than 70 at% to less than 100 at% in a total carbon content of 100 at%. The Csp 2 structure, which is increased by the control of the content of hydrogen, Csp 3 and the like, imparts electroconductive properties to the amorphous carbon film. The amorphous carbon film can be formed by a plasma CVD method using a reaction gas containing at least one kind selected from carbocyclic compound gases containing sp 2 -hybridized carbon and heterocyclic compound gases containing sp 2 -hybridized carbon and silicon and/or nitrogen. The forming of the amorphous carbon film on the surface of a base material 100 produces the electroconductive member. COPYRIGHT: (C)2008,JPO&INPIT

Amorphous carbon film, method for forming amorphous carbon film, electroconductive member comprising amorphous carbon film, and fuel cell separator

The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sp 2 hybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Csp 3 and the like to increase a structure comprising Csp 2 . This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sp 2 hybrid orbital, and a heterocyclic compound gas containing carbon having an sp 2 hybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.

Kazuyuki Nakanishi

Papers

Amorphous carbon, amorphous-carbon coated member, and process for forming amorphous carbon film

Structural analysis of Si-containing diamond-like carbon

Investigation of DLC-Si coatings in large-scale production using DC-PACVD equipment

Amorphous carbon film, method for forming amorphous carbon film, electroconductive member comprising amorphous carbon film, and fuel cell separator

Amorphous carbon film, method for producing amorphous carbon film, conductive member provided with amorphous carbon film, and fuel cell separator