An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A shift register circuit comprises a first transistor between a gate line output terminal and a clock terminal, a second transistor between the gate line output terminal and a first power supply terminal, a third transistor between a carry signal output terminal and the clock terminal and a fourth transistor between the carry signal output terminal and the first power supply terminal. Gates of the second and fourth transistors are connected to each other. A fifth transistor connected between a gate of the first transistor and a second power supply terminal and a sixth transistor connected between a gate of the third transistor and the second power supply terminal have gates both of which are connected to an input terminal. With this constitution, it is possible to suppress an influence between two synchronous output signals outputted from the shift register circuit.

Shift register circuit and image display apparatus containing the same

To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other; and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

Display device and electronic device

PROBLEM TO BE SOLVED: To prevent malfunction caused by deficiency of discharge of electric charges by shifting an output signal to the poststage without attenuating a level of an output signal. SOLUTION: This device is constituted by connecting stages consisting of TFT 21-25, 31. The TFT 21 is turned on by a control signal of high level from a terminal Φ, and electric charges are accumulated in a capacitor A by inputting an output signal (high level) of preceding stage from a terminal IN. Thereby, the TFT 22, 24 are turned on and the TFT 25 is turned off, when a clock signal from a terminal clk is made a high level, it is outputted from a terminal OUT as an output signal of the stage. Next, when a clock signal is made a low level and a control signal is made a high level again, electric charges accumulated in the capacitor A are discharged through the TFT 21 the TFT 25 of the preceding stage. When electric charges of the capacitor A are made the prescribed quantity or less, as the TFT 24 is turned off, the TFT 31 is turned on. Thereby, electric charges accumulated in the capacitor A are discharged completely through the TFT 31.

Shift register and electronic device

PROBLEM TO BE SOLVED: To provide a semiconductor device and a display driving device which restrain current consumption and stabilize operation when a circuit like a shift register is constituted by using an a-SiTFT, and can improve display quality when a display driving device is constituted. SOLUTION: Each transistor for constituting each stage RS (k) of a stage RS (1) to a stage RS (n) (n is a positive integer) which constitutes the shift register is formed of a thin film transistor, and Q50 is made to be a double gate structure. A prescribed voltage Vc is applied to a top gate terminal TG which voltage reduces a leakage current flowing across a drain and a source to a minimum when a 0 [V] is applied to a bottom gate terminal BG. Further, Q40 may be made to be a double gate structure, thereby enabling the restriction of the current consumption of the shift register and the stabilization of operation thereof. When the shift register is employed to the display driving device, display quality can be improved. COPYRIGHT: (C)2003,JPO

Semiconductor device and display driving device

PURPOSE: To obtain good picture quality and to reduce power consumption when degradation of liquid crystal is prevented by alternating current driving. CONSTITUTION: Interlaced scanning is performed in odd lines G1, G3 of a first frame by a gate driver as shown in fig. (a), and display data of 'H' and 'L' are supplied from a drain driver for each line. Interlaced scanning is performed in even lines G2, G4 of the first frame as shown in fig. (b), and 'L' and 'H' to which polarity of display data from a drain driver is reversed are supplied. Next, interlaced scanning is performed in odd lines G1, G3 of the second frame as shown in fig. (c), and display data of 'L' and 'H' to which polarity of display data from a drain driver is not reversed are supplied. Interlaced scanning is performed in even lines G2, G4 of the second frame as shown in fig. (d), and 'L' and 'H' to which polarity of display data from a drain driver is reversed are supplied. COPYRIGHT: (C)1996,JPO

Liquid crystal driving device

PROBLEM TO BE SOLVED: To provide a shift register circuit capable of reducing a processing load for generating a clock pulse while reducing a circuit area occupied by a supply line of clock pulse, and its driving control method. SOLUTION: This shift register circuit is provided with a plurality of stages of signal holding blocks RSA (k) sequentially connected in series, and constructed in such a manner that the output signal of the signal holding block RSA (k) of each stage is taken out as an external output signal GS (k), and supplied as a shift signal SF (k) to the signal holding block RSA (k+1) of a next stage. In each signal holding block RSA (k), two clock pulses having different phases are selectively set from three-phase clock pulses CK1, CK2 and CK3 according to the sequence number k. COPYRIGHT: (C)2005,JPO&NCIPI

Shift register circuit and its driving control method

PROBLEM TO BE SOLVED: To make a leakage current small, to perform high integration, to perform formation with less processes and to make an output level be appropriate by performing constitution by the transistors of the same conductive type. SOLUTION: The respective source and drain of P type transistors 13 and 14 are serially connected between a power source and ground, positive logic or negative logic is impressed from an input (IN) side to the gate of the P type transistor 13 and logic for which input (IN) is inverted is impressed from an inverted input (IN with upper bar) side to the gate of the P type transistor 14. Then, the source and drain of the P type transistor 12 are interposed between the inverted input (IN with upper bar) to the gate of the P type transistor 14 and a capacitor 15 whose one end is connected between the P type transistor 12 and the gate of the P type transistor 14 and other end is connected between the P type transistor 13 and connection point of the P type transistor 14 is interposed. Thus, a Low level outputted from an output terminal (OUT) is corrected so as to be a potential equivalent to a ground level.

克彦両澤

Papers

Shift register and electronic device

Semiconductor device and display driving device

Liquid crystal driving device

Shift register circuit and its driving control method

Semiconductor device and display driving device using the same

克彦 両澤

Papers

Shift register and electronic device

Semiconductor device and display driving device

Liquid crystal driving device

Shift register circuit and its driving control method

Semiconductor device and display driving device using the same

克彦両澤