An apparatus for coupling a signal supply with an antenna including first and second elements. The signal supply delivers a signal to the antenna at a connection locus. The first element has a first edge and the second element has a second edge; the connection locus includes part of the first and second edges. The apparatus includes a first and second feed structure. The first feed structure extends a feed distance from the signal supply to the second edge and divides the first element into two lands in spaced relation with the first feed structure to establish a separation distance intermediate the first feed structure and the two lands. The second feed structure couples the signal supply with the first proximal edge. The separation distance establishes a signal transmission structure between the two lands and the first feed structure.

Apparatus for establishing signal coupling between a signal line and an antenna structure

A method of drying an object comprising, providing an object into an RF cavity; applying broadband RF energy to the object in controlled manner which keeps the object within a desired temporal temperature schedule and within a desired spatial profile; and terminating the drying when it is at least estimated that a desired drying level is achieved.

Drying apparatus and methods and accessories for use therewith

We report the test results of a family of 92-96 GHz GaN power amplifiers (PA) with increasing gate peripheries (150 µm to 1200 µm). The 1200 µm, 3-stage PA produces 2.138 W output power (Pout) with an associated PAE of 19% at 93.5 GHz (V D =14V). The amplifier offers Pout over 1.5W with associated PAE over 17.8% in the 92–96 GHz bandwidth. The measured data show that the maximum Pout scales linearly with increasing gate periphery at an almost constant PAE around 20%. This demonstrates the high efficiency of on-chip power combining and enables W-band high power single chip solid state power amplifiers.

92–96 GHz GaN power amplifiers

We report on the design, fabrication, and testing of a new generation of all-solid-state frequency-multiplied terahertz sources providing up to ten times more output power at room temperature than the previous state of the art. These new sources benefit from both a novel “on-chip” power combined topology recently introduced and new devices and circuits thoroughly optimized for high-power operation. Prototypes centered at 180 GHz, 240 GHz, 340 GHz, 530 GHz, 1 THz, and 1.6 THz have been designed, fabricated, and tested. All sources exhibit record performances with conversion efficiencies reaching the theoretical limit predicted by physics-based numerical models. Measured nominal room-temperature output power levels are 500 mW at 180 GHz, 110 mW at 220 GHz, 35 mW at 330 GHz, 30 mW at 550 GHz, 2 mW at 1.03 THz, and 0.7 mW at 1.64 THz.

A New Generation of Room-Temperature Frequency-Multiplied Sources With up to 10× Higher Output Power in the 160-GHz–1.6-THz Range

W-band (75–110 GHz) is a potential radio frequency band to provide long-distance wireless links for mobile data transmission. We proposed a high-speed long-distance wireless transmission link at W-band based on some enabling technologies and advanced devices, such as antenna polarization multiplexing combined with multiple-input multiple-output, large-gain/high-power W-band electrical amplifiers, high-gain small-beamwidth Cassegrain antennas, and wideband optical/electrical components. We experimentally demonstrated that our proposed wireless transmission link can realize up to 1.7-km wireless delivery of 20-Gb/s@85.5-GHz millimeter-wave signal with a bit-error rate less than $3.8 \times 10^{-3}$ .

Long-Distance Wireless mm-Wave Signal Delivery at W-Band

An advanced high power, high frequency GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. The key enabling semiconductor technology is a 150 nm T-gate GaN HEMT with an output power exceeding 300mW and a peak PAE (power added efficiency) of 37%. With this process, W-band power amplifier MMICs have been designed and fabricated that demonstrate output powers of 1.7 watts, power added efficiencies greater than 20%, and small signal gains of 21 dB. In addition, the compactness of these MMIC designs have allowed for MMIC power densities (MMIC output power relative to MMIC area) exceeding 1/2 watt/mm2.

W-band GaN power amplifier MMICs

A biconical antenna having fully adjustable design parameters. The biconical antenna has a coaxial feed having outer and inner conductors. A lower support structure secures a lower cone to the outer conductor. An upper support structure secures an upper cone to the inner conductor. A dielectric window support is disposed between the lower and upper support structures. To make the antenna relatively lightweight, each cone may be made of sheet metal plates that are connected to the lower and upper cone support structures. A reservoir is formed within the upper cone. Dielectric material, such as oil, is disposed within the antenna. Air bubble escape holes are disposed in the upper support structure so that air bubbles that are formed at the coaxial feed can escape to the reservoir. The holes do not allow electromagnetic power leakage between the coaxial feed and the reservoir, and the position of the holes is such that the air bubbles rise from the coaxial feed into the reservoir. Tapered dielectric material may be positioned between the upper and lower cones. A first shape tapers inwardly from the first and second cones toward the dielectric window support. A second shape tapers outwardly from the first and second cones away from the dielectric window support.

High-power shaped-beam, ultra-wideband biconical antenna

An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author's knowledge, these power amplifier designs demonstrate performance beyond previously published results for E-band power amplifier MMICs.

High power, high efficiency E-band GaN amplifier MMICs

The disclosed system, device and method for an anti-missile system generally includes a ground-based sensor array generating tracking data of a guided missile tracking a target. A control node in communication with the ground-based sensor array generates targeting data from the tracking data. A phased array directed-energy unit in communication with the control node radiates the guided missile with microwave radiation based on the targeting data received from the control node, where the microwave radiation disrupts an electronic component of the guided missile such that the guided missile discontinues tracking the target.

Anti-Missile system and method

A portable weapon comprises a non-lethal portion and a lethal portion. The lethal portion may comprise a rifle, and the non-lethal portion may comprise a millimeter-wave directed energy weapon. The non-lethal portion may comprise a kit to add non-lethal capability to a lethal weapon. The non-lethal portion may comprise an output antenna to generate a high-power millimeter-wave initial wavefront, a main reflector, and a sub-reflector to reflect the initial wavefront to the main reflector. The main reflector may direct the reflected wavefront in a bore-sighted direction toward a target. The wavefront directed by the main reflector may have a power density selected to deliver a non-lethal deterring effect on the target. In some embodiments, the non-lethal portion may include a replaceable energy-storage module.

Ken Brown

Papers

W-band GaN power amplifier MMICs

High-power shaped-beam, ultra-wideband biconical antenna

High power, high efficiency E-band GaN amplifier MMICs

Anti-Missile system and method

Weapon having lethal and non-lethal directed-energy portions