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Showing papers by "Kern Rim published in 2022"

Proceedings Article•DOI•
Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint

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H. Fukutome, K. Suh, Yasuo Moriyama, Bang-Ul Eom, J. K. Kim, Changnoh Yoon, Wook Hyim Kwon, Yong-Seok Chung, Yoonjee Nam, Y. H. Kim, S Park, J.K. Park, H. Cho, Kern Rim, Seokhong Kwon 
12 Jun 2022
TL;DR: In this paper , the feasibility of single-fin (1-fin) devices from viewpoint of scaling switching energy (CV2) and device footprint width, which affects standard cell height, was comprehensively studied.
Abstract: We have comprehensively studied feasibility of single-fin (1-fin) devices from viewpoint of scaling switching energy (CV2) and device footprint width, which affects standard cell height. We have clarified methodology to lower minimum operation voltage (Vmin) of flip-flop (F/F) featuring 1-fin devices in order to maximize gain of CV2. For the first time, we have demonstrated Vmin of 1-fin F/F same as 2-fin one and 27% CV2 reduction with keeping speed at a constant leakage.