An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A surgical clip applier includes a housing, a pair of handles pivotably connected to opposite sides of the housing, a channel assembly which is anchored to the housing and a jaw assembly which is anchored to the channel assembly. The jaws are opened and closed by a cam plate which is slidably positioned in the channel assembly and is provided with cam slots at its distal end to engage drive rivets positioned on the jaw members. A pusher bar assembly is also provided to feed clips from a series of clips to the jaw mechanism, and the instrument operates such that all moving components move in the same direction during the closing stroke of the handle, and then move in the same direction opposite to the closing direction when the handles are in the opening stroke. A novel lockout mechanism is also provided to render the instrument inoperable after all the clips have been utilized from the instrument.

Surgical clip applier

A surgical clip applying apparatus is disclosed which has a handle portion, a body extending distally from the handle portion defining a longitudinal axis and a number of surgical clips disposed within the body. The apparatus has a movable member biased in the housing adjacent the wedge plate. An actuator longitudinally advances the wedge plate a predetermined distance to a distal most position. The wedge plate has an end being disposed between first and second jaw portions at the distal most position. The wedge plate end is configured to maintain the jaw assembly in the spaced apart position during loading of the surgical clip and the wedge plate end reduces torque and external forces on the jaw assembly during the loading. The movable member holds the wedge plate in the distal most position during the loading and the movable member is deflected at a conclusion of the loading. The movable member releases the wedge plate upon deflection. The movable member allows a longitudinal proximal retraction of the wedge plate from the distal most position.

Endoscopic surgical clip applier

An apparatus for application of surgical clips to body tissue is provided and includes a handle assembly and a shaft assembly. The handle assembly includes a drive assembly; and a trigger operatively connected to the drive assembly. The shaft assembly extends from the handle assembly and includes an articulating neck assembly; and an end effector assembly supported on a distal end of the articulating neck assembly and being configured to form a surgical clip in place on the body tissue.

Articulating endoscopic surgical clip applier

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

PROBLEM TO BE SOLVED: To provide an apparatus which is hardly restricted by the size and the shape of a base material, and efficiently plasma-processing a surface of the base material with a simple constitution SOLUTION: In a plasma processing apparatus, a rotary electrode 20 and a base material 28 face each other, plasma 42 is generated therebetween, reaction gas is subjected to chemical reaction by the plasma 42 to perform plasma processing of the base material 28 At least a part of the upstream side part, in the rotational direction of the rotary electrode 20, of the circumferential surface of the rotary electrode 20 is covered by a covering member 14, and the distance between the covering member 14 and the base material 28 is set to be larger than the distance between the rotary electrode 20 and the base material 28 Thus, reaction gas in the covering member 14 is entrained by the circumferential surface of the rotary electrode 20 and fed to the plasma 42 between the base material 28 and the rotary electrode, and gas back-flowing from a plasma forming area is released from a space 29A between the covering member 14 and the base material 28 COPYRIGHT: (C)2004,JPO&NCIPI

Plasma processing apparatus

Two infrared free electron lasers (FELs) facilities are operational to cover the wavelength range of 1–20 μm. We are challenged to simultaneously deliver an FEL beam to the diagnostics room and eight user's stations. We also wish to produce 0.3 μm-FEL oscillations using a 2.68 m undulator ( λ u = 4 cm) installed at the 160-MeV beam line of the FELI linac with a thermionic gun. Two IR-FEL facilities and the simultaneous beam sharing systems will be opened for FEL users in this October.

The FELI FEL facilities — challenges at simultaneous FEL beam sharing systems and UV-range FELs

A converged ion beam apparatus wherein a very small beam spot can be formed with a high energy ion beam after passing a reduced route in which a type of the ion beam is classified. The device is incorporated in an apparatus wherein an ion beam from an accelerator is introduced in a spot to a specimen by way of an ion type classifying device, an objective collimator and a beam collector to perform reforming of a surface or an analysis of physical properties and/or composition or the like of a small area of the specimen. The objective collimator is disposed just on the downstream of the accelerator, and an analyzing component for analyzing an ion type and energy of a beam is interposed in a drift space in an object distance between the objective collimator and a quadruple pole magnetic lens. Several components of the apparatus are also improved including the quadruple pole magnetic lens, an objective slit device and a specimen chamber.

Converged ion beam apparatus

First lasings at 5.5 and 1.88 μm were achieved in October 31, 1994 and February 27, 1995 at the FELI using a 2-m long undulator and a 3-m long one installed at 30 and 80-MeV beam lines of the FELI S-band linac with a thermionic gun, respectively. Lasing on the third harmonics at 0.63 μm was also observed in February 28. 24-μs stable rf pulses help FEL oscillations at short wavelengths. At 7.5, 1.88 and 0.63 μm, FEL peak powers are 3.5, 2, and 0.45 MW, respectively. The present maximum average power is 0.14 W around 7.5 μm at a 0.5-mm mirror aperture of the optical cavity for the 2-m long undulator for 4000 micropulses/s.

Optical property of infrared-FELs at the FELI

A charged particle accelerator capable of accelerating arbitrarily charged particles to an arbitrary energy level and resonating at a low frequency suitable for accelerating heavy ions, including quadruple electrodes which are supplied with high frequency power and disposed in the direction of the center axis of a cylinder-shaped container and a resonant circuit having a capacitor and an inductor for supplying a voltage to the quadruple electrodes. The capacitor is composed of a plurality of metallic plates provided along the center axis at specified intervals in the vicinity of the quadruple electrodes, and a plurality of conductive supports supporting the metallic plates which are directly connected to the container together with the supports and the container form the inductor. Since the metallic plates and the quadruple electrodes are electrically directly connected to each other, an arbitrary resonant frequency can be obtained by adjusting the intervals between the plurality of metallic plates with a position adjusting mechanism. In one embodiment, flat electrodes are protruded from opposite sides of the inner wall of the container and are disposed in parallel to the center axis and close to each other to constitute a capacitor, which makes it possible to have a resonant frequency in a low frequency range. To obtain a large Q value, the surface current resistance is lowered by covering the inner wall of the container and the surfaces of the flat plate electrodes with a superconductive material.

Kobayashi Akira

Papers

Plasma processing apparatus

The FELI FEL facilities — challenges at simultaneous FEL beam sharing systems and UV-range FELs

Converged ion beam apparatus

Optical property of infrared-FELs at the FELI

Charged particle accelerator