Various articles, such as footwear, apparel, athletic equipment, watchbands, and the like, and methods of forming those articles are presented. The articles are generally formed, in whole or in part, using rapid manufacturing techniques, such as laser sintering, stereolithography, solid deposition modeling, and the like. The use of rapid manufacturing allows for relatively economical and time efficient manufacture of customized articles. The articles may include one or more reinforcements configured to provide added durability to various regions of the articles. In addition, the articles may be formed from two or more materials in a single rapid manufacturing process. The rapid manufacturing additive fabrication technique may also include using of varying intensities of the laser to fuse material to form the articles.

Articles and methods of manufacture of articles

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with halfnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper intersititial positions.

Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity

Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

Copper alloys for chip and package interconnections

A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.

Nitride semiconductor laser element

Copper alloy lead materials used in the fabrication of semiconductor devices such as ICs and LSIs are required to have a tensile strength of 40 kgf/mm2 or more, an elongation of 4% or more, an electrical conductivity of 50% IACS or more, and a softening point of 400° C. or higher. The copper alloy lead material of the present invention exhibits even higher degrees of tensile strength and elongation and yet satisfy the values of electrical conductivity and softening point that are required for Cu alloy lead materials to be used with ordinary semiconductor devices. Therefore, the Cu alloy lead material of the present invention is applicable not only to ordinary semiconductor devices but also to those with higher packing densities while displaying equally superior performance.

Copper alloy lead material for use in semiconductor device

PURPOSE:To obtain the titled material having various characteristics required of lead material for semiconductor device by composing the above of a Cu alloy which contains Cr or/and Zr and in which respective average grain sizes of crystalline substances, precipitates and grains are specified. CONSTITUTION:The Cu-alloy lead material for semiconductor device is composed of the Cu alloy containing, by weight, 0.05-1% Cr and/or 0.005-0.3% Zr and having a structure characterized by the average grain sizes of crystalline substances, precipitates and grains which are regulated, respectively, to =50kgf/mm tensile strength and an elongation as high as >=6% can be obtained and further remarkably improved press punchability can be obtained as well.

Cu-alloy lead material for semiconductor device

A semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains 0.05-1% of Cr, 0.005-0.3% of Zr, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and 0.001-0.3% of at least one element selected from the group consisting of P, Mg, Al, Zn and Mn, with the balance being Cu and no more than 0.1% of incidental impurities, the percent being on a weight basis. The invention also provides a semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains either 0.05-1% of Cr or 0.005-0.3% of Zr or both, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and which further contains one or more of 0-2% of a metal selected from the group consisting of Fe, Co and Be, 0-1% of a metal selected from the group consisting of Mg, Al, Zn, Mn, B, P, Y and a rare earth element, and 0-2% of a metal selected from the group consisting of Nb, V, Ta, Hf, Mo and W, the percent being on a weight basis, with the balance being copper and incidental impurities, and which has a structure wherein the average grain size of any eutectic crystal present is no more than 10 μm, the average grain size of any precipitate present is no more than 0.1 μm, and the average size of any crystalline grains present is no more than 50 μm.

Semiconductor device having copper alloy leads

PROBLEM TO BE SOLVED: To provide a copper alloy-made hot-die forged synchronizer ring which has high fatigue strength, particularly does not develop the breakage in a chamber part mostly and easily developing the fatigue breakage, even in the case of practically using under condition of high loading in the thinning state and displays the excellent performance for long term. SOLUTION: The hot-die forged synchronizer ring is constituted of the copper alloy having a composition by mass% of 28-34% Zn, 1.5-4% Al, 2-4.5% Mn, 0.5-2% Si, 0.05-0.5% Cr, 0.2-0.6% Ni, 0.02-0.5% Fe and the balance Cu with unavoidable impurities and the structure uniformly dispersing the relatively coarse crystallized grains and the superfine precipitations constituted with respective intermetallic compounds in the matrix of β-phase shown in a Cu-Zn system phase diagram and further, dispersedly distributing α-phase as acicular shape shown in the same phase diagram. COPYRIGHT: (C)2001,JPO

Copper alloy-made hot-die forged synchronizer ring having excellent fatigue strength in chamfer part

PURPOSE:To provide the active Ag brazing filler metal by which the excellent characteristics and high reliability for brazing ceramics to ceramics, ceramics to metal, or metal to metal are obtd. CONSTITUTION:This active Ag brazing filler metal has the structure formed by dispersing intermetallic compd. particles having =22 kinds among Hf, Zn, Zr, Be and Li at need, consisting of the balance Ag and inevitable impurities.

Kobayashi Masao

Papers

Copper alloy lead material for use in semiconductor device

Cu-alloy lead material for semiconductor device

Semiconductor device having copper alloy leads

Copper alloy-made hot-die forged synchronizer ring having excellent fatigue strength in chamfer part

Active ag brazing filler metal