Power is fed from a feeding coil L2 to a receiving coil L3 by magnetic resonance. An oscillator 202 alternately turns ON/OFF switching transistors Q1 and Q2 to cause AC current IS of drive frequency fo to flow in a transformer T2 primary coil Lb. The AC current IS causes AC current I1 to flow in an exciting coil L1 and causes AC current I2 to flow in the feeding coil L2.

Wireless power feeder and wireless power transmission system

A plasma processing device and a plasma processing method capable of maintaining stable plasma discharge, obtaining a sufficient plasma processing ability, and lowering the plasma temperature. The plasma processing device includes a plurality of electrodes, between which a discharge space is formed. A dielectric body is arranged at the discharge space side of at least one of the electrodes. A plasma generating gas is supplied to the discharge space and voltage is applied between the electrodes, so that discharge is caused in the discharge space under a pressure in the vicinity of the atmospheric pressure and plasma generated by this discharge is blown from the discharge space. In this plasma processing device, a waveform of the voltage applied between the electrodes is an alternating voltage waveform having no halt time. At least one of the rise time and the fall time of this alternating voltage waveform is set to 100 microseconds or below, the repetitious frequency is set to 0.5 to 1000 kHz, and the electric field intensity applied between the electrodes is set to 0.5 to 200 kV/cm.

Plasma processing device and plasma processing method

It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.

Methods for forming wiring and manufacturing thin film transistor and droplet discharging method

There is provided an inverter circuit which allows a single drive circuit to carry out both the tracking control for tracking resonance frequency fluctuations caused by load fluctuations, and the power control, thereby reducing switching loss. An inverter drive circuit part obtains a phase difference between output current and output voltage directed to a load circuit which is connected to a midpoint of two arm circuits of the inverter circuit, and controls a phase of the driving signal directed to each of the semiconductor switches in such a manner that the phase difference becomes zero or a predetermined value. This allows an operating frequency of the inverter circuit part to track a resonance frequency of the load circuit. In addition, this enables a current phase to be delayed with respect to a voltage phase, thereby achieving ZCS. Since the phase difference between the output current and the output voltage is used, it is not necessary to use an auxiliary circuit to measure a current value in proximity to the semiconductor switches, thereby achieving a simple configuration.

Phase shift inverter, x-ray high-voltage device using same, x-ray ct device, and x-ray imaging device

A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

Bridge circuits and their components

The invention provides a positive-negative type high frequency switching power supply unit which provides a high frequency output of an ideal sine waveform to allow reliable switching with very low switching loss without being influenced by a leakage inductance of the load side, a parasitic capacitance and a parasitic inductance produced by a wiring line or the like, and a load condition. The positive-negative type high frequency switching power supply unit includes an H-bridge switching circuit including four semiconductor switching elements connected in an H-bridge connection, a resonance circuit which resonates with a positive-negative pulse wave outputted from the H-bridge switching circuit, and a PWM control circuit for detecting a voltage and current of the resonance circuit by means of a pulse transformer and a current detector, respectively, and feeding back the voltage and current to the H-bridge switching circuit so that the four semiconductor switching elements may perform switching operations in a switching frequency higher than the resonance frequency of the resonance circuit in a fixed switching pattern of on/off states.

Positive-negative pulse type high frequency switching power supply unit

PROBLEM TO BE SOLVED: To provide a plasma treatment device which can obtain a glow-state uniform plasma even when the distance between electrodes is increased to plasma-treat a thicker work, and input power to the plasma is increased to improve the plasma treatment capability, and which is high in plasma treatment capability. SOLUTION: A discharge space 3 is formed between electrodes 1, 2 facing each other. A dielectric body 4 is mounted on the discharge space 3 side of at least one of the electrodes 1, 2. A discharge is generated under a pressure of a plasma generation gas near atmospheric pressure, by applying a pulse wave voltage repeating a positive polarity and a negative polarity alternately or an alternating voltage having no pause simultaneously to the one electrode 1 and the other electrode 2, and by overlapping phases of the voltages applied to the respective electrodes 1, 2 with the positive and negative polarities of the voltages inverse to each other. A work 6 is exposed to a plasma 5 generated by the discharge. COPYRIGHT: (C)2004,JPO

Plasma treatment method and plasma treatment device

PROBLEM TO BE SOLVED: To prevent an electrode from being heated to generate a high- temperature plasma even upon continuous use, permit shortening of the treatment time and improving treatment quality by a stable low-temperature plasma, prevent an article to be treated from being damaged by abnormal discharge, easily control plasma generation and permit making an apparatus scale small. SOLUTION: High voltage applied between a pair of electrodes 1, 2 is resonated as an attenuating oscillation waveform periodic wave that a oscillation wave is intermittently repeatedly produced at every oscillation wave, and resonance deviation is caused every attenuating oscillation wave attending on generation of arc discharge to interrupt the arc discharge, thereby producing intermittent arc discharge.

Plasma generating method and plasma generator

PROBLEM TO BE SOLVED: To improve a rise time of a voltage applied to an electrode, and to generate stable plasma without becoming a streamer by glow discharge in pressure close to the atmospheric pressure. SOLUTION: When plasma is generated between both electrodes by dielectric barrier discharge, pulse-wave or sine-wave high voltages having polarities symmetrical in terms of polarity, having phases overlapped and respectively alternating positive and negative phases are applied to both the electrodes A and B at the same time. The balance between ions and electrons in the plasma is adjusted by varying the high voltage of the one-side electrode or those of both the electrodes. COPYRIGHT: (C)2004,JPO

Plasma generating method and plasma generating device

PROBLEM TO BE SOLVED: To provide a high-frequency and high-voltage power source which is capable of making a high-voltage signal steep and quick of rise and fall and narrow in pulse width and can materialize the plasma discharge easily, even at normal voltage. SOLUTION: This power source comprises an H bridge switching circuit 1 where four pieces of semiconductor switching elements SW1, SW2, SW3, and SW4 are bridged in H, a switching control circuit 2 which switches these repeatedly in order in five combination modes of ON/OFF, and a high-voltage transformer 3 which boosts the output voltage. For this high-voltage transformer, a primary coil and a secondary coil are wound in the shape of a double cylinder apart from each other, with the former outside and the latter inside, around the core, and the secondary coil is divided into plural phases, and besides the number of windings is reduced stepwise from the phase of winding start to the phase of winding end so as to enlarge the interval stepwise to the primary coil.

Koichi Matsunaga

Papers

Positive-negative pulse type high frequency switching power supply unit

Plasma treatment method and plasma treatment device

Plasma generating method and plasma generator

Plasma generating method and plasma generating device

High-frequency and high-voltage power source