A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.

Phase shift mask blank, phase shift mask and method of manufacture

By entering a low acceleration Si ion beam of 500 V or lower or a low acceleration Si ion beam of 500 V-2000 V having been slanted such that an injection depth becomes shallow, which has been mass-separated from a liquid alloy ion source containing Si by a mass separator and converged by an ion optical system, the amplitude defect near a surface of the Mo/Si multilayer film or the Mo 2 C/Si multilayer film is removed by a physical sputter or a gas assist etching such that an interlayer of the Mo/Si multilayer film or the Mo 2 C/Si multilayer film in a lower layer is not destroyed.

Method of correcting amplitude defect in multilayer film of EUVL mask

PROBLEM TO BE SOLVED: To provide a measuring method/means which can measure a shape of an arbitrary pattern such as surrounded by non parallel lines when a pattern length is to be measured with the use of display image information of a scanning microscope or the like and which prevents personal differences and errors for each measurement. SOLUTION: There are set a step of setting an edge detection reference line by designating an edge detection range and the number of edge points on each side part of the pattern in a microscope image, a step of extracting from image information, edge points as luminance change points by searching from a perpendicular direction with respect to the set edge detection reference line, a step of detecting a line for approximating each side part of the pattern on the basis of position information of a plurality of edge points, and a step of specifying the shape of the pattern by an intersection of two lines from the approximate line information of each side part of the pattern, a specific point detected from a plurality of intersections, an angle defined by two straight lines, and a distance between two specified points.

Method and system for measuring pattern with use of display microscope image

The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Height measurement device and charged particle beam device

PROBLEM TO BE SOLVED: To prevent overetching in glass caused when a black defect in a chromium mask is corrected by a photomask defect correcting device using a charged particle beam. SOLUTION: An overetched portion 3 of glass is filled with a transparent film 6 by electron beam deposition using TEOS (tetraethoxy silane) or siloxane molecules as a material. The depth distribution in the overetched portion of the glass is obtained with an atomic force microscope, and the film thickness to fill the defect is controlled according to the distribution to flatten the surface of the filled transparent film. Otherwise, the transparent film is deposited to be higher than the normal glass surface, and the portion higher than the glass surface is scraped off by a mechanical process by an atomic force microscope with a fixed height so as to flatten the surface of the filled transparent film. COPYRIGHT: (C)2009,JPO&INPIT

Method for correcting black defect in chromium mask

PURPOSE:To provide a method of recovering a mask which has a lower transmissivity or not and to realize high-precision modification which allows easy detection of an etching terminal by modifying the recessed-shape defects of a phase shifter through the buildup of local points. CONSTITUTION:Protruded-shape defects 4 are removed by FIB assist etching and recessed-shape defects 4 are dipped around at a desired depth. If a phase shifter is made of silicon or its compound, gas including fluorine, chloride or bromine is used. If it has an organic film, O2, O3 or NO2 gas is used. After the defects are removed by spatter etching, damaged layers are removed by ion assist etching using XeF2 gas. A silicon oxide film or a silicon nitride film is built up in the recessed defects 4 by using focused ion beam of 10kev or less and modified. In so doing, An ion-filled layer, different from a shifter structural element, is formed on the surface of a molten silica substrate 1 and a phase shifter is additionally formed on the upper layer.

Phase shift mask and mask modifying method

PROBLEM TO BE SOLVED: To provide a method in which the height of a protruding object can be measured by using an FIB apparatus (a focused ion beam apparatus) without tilting a sample and to execute both the height measurement of a shifter convex defect and the detect correction of a photomask by using one FIB apparatus. SOLUTION: A reference face and a measuring point on the surface of a sample 15 are irradiated with a pulsed ion beam. The flying time in which the ion beam reaches the reference face from a prescribed cross section 19 on a flying route and the flying time in which the ion beam reaches the measuring point from the prescribed cross section 19 are measured. The difference between the flying time up to the measuring point and the flying time up to the reference face is found. On the basis of the difference between the flying time and the flying time, a height up to the measuring point from the reference face is found.

Komano Haruki

Papers

Phase shift mask and mask modifying method

Measuring method and surface shape by using focused ion beam apparatus and focused ion beam apparatus