An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the trench electrode (11) and the bottom (27) of the trench (20) to reduce the dielectric coupling between the trench electrode (11) and the body portion at the bottom (27) of the trench in a compact manner. In power transistors, the reduction in dielectric coupling reduces switching power losses, and in Schottky diodes, it enables the trench width to be reduced.

Trench-gate semiconductor devices and their manufacture

In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.

Focus ring, plasma etching apparatus and plasma etching method

In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.

Method of forming a trench with a rounded bottom in a semiconductor device

Method for manufacturing semiconductor device and insulated gate type power transistor

A method of manufacturing a trench gate type IGBT element, which can sufficiently round off a corner at a bottom of a trench with restricting silicon from being excessively etched. A trench is formed at a surface of a P+-type monocrystalline silicon substrate by conducting an anisotropic etching (STEP 1). A corner portion at a bottom of the trench is formed to a concave shape surface by conducting a concave etching (STEP 2). The concave etching etches the silicon substrate so that a diameter of the trench is gradually reduced as the etching advances. After that, the corner portion at a bottom of the trench is rounded off by conducting an isotropic etching (STEP 3). Since the corner portion is chamfered, a radius of curvature of the corner portion of the bottom of the trench can be increased even if an amount of the etching using the isotropic etching in the STEP 3 is small.

Integrated gate bipolar transistor and method of manufacturing the same

PROBLEM TO BE SOLVED: To miniaturize a trench by sufficiently rounding the corner of the trench bottom and by preventing silicon from being scraped excessively. SOLUTION: A method for manufacturing a semiconductor device includes a first step of forming a trench 5a on a semiconductor substrate 1 by anisotropic etching and a second step of making a corner 5 at the bottom of the trench 5 round after the first step, by isotropic etching under the condition which does not eliminate a reaction product 20 formed on the inner plane of the side wall of the trench 5 by the anisotropic etching. Only the corner 5a at the bottom of the trench 5 can be rounded without etching the side wall of the trench 5 in the second step in this method. COPYRIGHT: (C)2001,JPO

Method for manufacturing semiconductor device and insulating gate type of power element

On a rear surface of a semiconductor (10), a contact layer (11), a diffusion preventing layer (12) and a solder joint layer (13) are formed, and this solder joint layer (13) is connected to a mount base (15) by a Pb-Sn solder layer (14). The contact layer (11) is formed of a rare earth metal, its silicide or a composite thereof, the diffusion preventing layer (12) is formed of a ferrous metal, and the solder joint layer (13) is formed of a Ni-Au alloy. By forming the diffusion preventing layer (12) using the ferrous metal, a diffusion of tin in a solder is prevented and by the solder joint layer (13) of the Ni-Au alloy, an excellent solder joint property can be maintained to reduce the number of laminated layers. Further, as a surface treated layer of at least one joint member, the Ni-Au alloy is used and by heating the semiconductor substrate via a solder foil in a reducing atmosphere a high airtightness is obtained.

Kondo Kenji

Papers

Method of forming a trench with a rounded bottom in a semiconductor device

Method for manufacturing semiconductor device and insulated gate type power transistor

Integrated gate bipolar transistor and method of manufacturing the same

Method for manufacturing semiconductor device and insulating gate type of power element

Surface treated structure for solder joint