Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.

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CMOS active pixel sensor type imaging system on a chip

A subscriber unit for use in a multiple access spread-spectrum communication system includes a spread spectrum radio interface, responsive to a rate function signal from a base station, and first and second despreaders. The base station assigns the rate function spread-spectrum message channels and the first despreader recovers and modifies an information signal one of the spread spectrum message channels. The information channel mode is then modified for processing by the second despreader, with the second despreader supporting a different information signal rate. The subscriber unit has a capability of communicating with a dynamically changing a transmission rate of an information signal which includes multiple spread spectrum message channels. The system includes a closed loop power control system for maintaining a minimum system transmit power level for a radio carrier station and the subscriber units, and system capacity management for maintaining a maximum number of active subscriber units for improved system performance.

Code division multiple access (CDMA) communication system

The present invention is related to an image sensor packaging technique based on a Ball Grid Array (BGA) IC packaging technique, further referred to as image sensor ball grid array (ISBGA). A transparent cover is attached to a semiconductor substrate. Depending on the method of attaching the cover to the substrate a hermetic or non-hermitic sealing is obtained. The obtained structure can be connected trough wire-bonding or flip chip connection.

Image sensor ball grid array package and the fabrication thereof

A receiver receives signals and noise over a frequency spectrum of a desired received signal. The desired received signal is spread using code division multiple access. The received signals and noise are demodulated to produce a demodulated signal. The demodulated signal is despread using a code uncorrelated with a code associated with the desired received signal. A power level of the despread demodulated signal is measured as an estimate of the noise level of the frequency spectrum.

Automatic power control system for a code division multiple access (cdma) communications system

R, G and B LEDs are used as a light source of an electronic flash. Electric energy is supplied to a capacitor to the LEDs. A system controller controls light emitting amounts of the LEDs so that a color temperature of the electronic flash light becomes a color temperature that has been manually set with a color temperature setting switch or a color temperature of a light source determined by color temperature sensors.

Electronic flash, electronic camera and light emitting head

A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results Further, a method of manufacturing the solid state image pick-up device of the present invention is provided

Solid state image pickup device having particular package structure

An electronic still camera in which every time a solid state pickup element is read out, immediately it is read out again in order to empty out residual charges.

Electronic still camera system

A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results. Further, a method of manufacturing the solid sate image pick-up device of the present invention is provided.

Solid state image pickup device and method of manufacturing the same

In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely. Alternatively, the ion peak concentration of the ions implanted in the semiconductor substrate and the insulating material layer is located in the proximity of the boundary between the insulating material layer and the semiconductor substrate in the portion to be used to constitute the n-channel transistor, and is located in the semiconductor substrate apart from the insulating material layer in the portion to be used to constitute the p-channel transistor. This also enables the threshold voltage in the n-channel and p-channel transistors to be precisely controlled in the manufacturing processes.

Complementary insulated-gate field effect transistor integrated circuit and manufacturing method thereof

A solid state image-pickup device having an expanded dynamic range so that light reception from a subject having a high light intensity can be carried out without saturation of the light receiving elements of the image-pickup device.

Kondo Ryuji

Papers

Solid state image pickup device having particular package structure

Electronic still camera system

Solid state image pickup device and method of manufacturing the same

Complementary insulated-gate field effect transistor integrated circuit and manufacturing method thereof

Solid state image-pickup device with expanded dynamic range