Showing papers by "Konstantin S. Novoselov published in 1998"
TL;DR: In this paper, the authors investigated tunnelling via X-valley related states in GaAs/AlAs/GaAs single-barrier structures, and the features in the tunnel current, which are experimentally observed, are associated with resonant tunneling through the Xvalley AlAs quantum well states derived from the conduction band minima, both perpendicular (Xx and Xy) and parallel (Xz) to the (100) growth direction.
Abstract: Tunnelling, via X-valley related states, is investigated in GaAs/AlAs/GaAs single-barrier structures. The features in the tunnel current, which are experimentally observed, are associated with resonant tunnelling through the X-valley AlAs quantum well states derived from the conduction band minima, both perpendicular (Xx and Xy) and parallel (Xz) to the (100) growth direction and the Si-donor states linked to the X valley. Tunnelling through the impurity states associated with Xz and Xxy valleys are observed for the first time.
5 citations