A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.

Plasma processing apparatus and plasma processing method

Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like). In certain embodiments, the ion sources, systems and methods can enhance the ability to make tips having desired physical attributes (e.g., the number of atoms on the apex of the tip). This can enhance performance (e.g., increase reliability, stability and the like).

Ion sources, systems and methods

The present invention relates to a universal advertising and payment system for networking, monitoring and controlling electronic commerce and vending equipment. The system can effectuate electronic commerce and interactive advertising at the point of sale. Vending equipment includes copiers, phones, facsimile machines, printers, data-ports, laptop print stations, notebook computers, palmtop computers (PALM PILOT), microfiche devices, projectors, scanners, cameras, modems, communication access, personal computers (PC), PC terminals (NET PC), and network computers (NC). Vending equipment can be networked to each other through a first network, programmable and accessible by a PC, server, point of sale (POS) system, property or management information system (PMS/MIS), and networked to a second network. The first network and second network can be the same network. Complete control of a vending machine's functionality, including usage, control, diagnostics, inventory, and marketing data capture can be effectuated locally or by remote connection to the network. Remote connection to the network includes Internet type connections, telecommunication (telephone, ISDN, ADSL), VSAT satellite, and other wire and wireless transmission. The present invention allows a user to obtain authorization for use, pay for products and services, and configure the vending equipment with a smart card, or magnetic card (card). Magnetic cards include smart card, credit card, debit card, pre-paid, automated teller machine (ATM) or other bank or private issued card. Users can also use a hotel room key/card or other insertion type-identifying device. Additionally, biometric identification such as hand writing, voice, finger, hand, or eye (iris scan) can be utilized to control the system.

Universal interactive advertising and payment system network for public access electronic commerce and business related products and services

A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

Method and apparatus for specimen fabrication

A technique for quantitatively expressing a manufacturing difficulty level of a photomask and for efficiently manufacturing the photomask is provided. A mask manufacturing difficulty level different for each mask layout, product, and mask layer is relatively recognized with a mask manufacturing load index calculated by a mask manufacturing load prediction system, and when layout correction is possible, the final layout is corrected to a layout with a low difficulty level, and a mask ordering party provides a mask manufacturer with information regarding the mask manufacturing difficulty level in an early stage. The mask manufacturing load index is expressed with a defect guarantee load index and a lithography load index.

Method of manufacturing photomask

Disclosed are a scanning electron microscope for cross section observation capable of cutting more accurately a cross section of a specific portion of semiconductor wafer in a shorter time, and a cross section observing method employing such a microscope. The scanning electron microscope includes an SEM column 100, an FIB column 200 mounted together with SEM column 100, and a reflected-electron detector 21 for detecting electrons to be reflected from the semiconductor wafer by scanning with an electron beam 30 from the SEM. Thus, since a process of cutting a cross section to be observed by scanning with an ion beam 31 from FIB column 200 can be observed in real time by employing the reflected electrons of electron beam 30 from SEM column 100, a specific portion of the cross section can be cut more accurately in a shorter time.

Scanning electron microscope for observation of cross section and method of observing cross section employing the same

A method of correcting a pattern defect in a phase shift mask allowing planarization of bump and divot defects in a phase shift mask with high accuracy is disclosed In the case of a bump defect, the region including the bump defect is irradiated with an FIB and supplied with a deposition gas, thereby forming a planarization film, and then the planarization film is etched back with the FIB Thereafter, a layer containing ions is removed away using a laser beam In the case of a divot defect, the region including the divot defect is planarized by application of an SOG film, and then the unnecessary part of the SOG film other than in the region of the divot defect is removed away by etching back to the interface of the SOG film with the FIB and developing the same Thereafter, the layer containing ions is removed away utilizing a laser beam

Method of correcting defects in the pattern of phase shift mask

A mask repair method in which a transparent defect of in a phase shifter pattern is repaired by ion beam etching instead of a shifter pattern film deposition. A portion of the mask substrate below the transparent defect region is etched with an ion beam to a depth such that the phase of light passing through the adjacent transparent pattern regions and the phase of light passing through the etched region are opposite to each other. This mask repairing method enables high-contrast exposure and ensures high working accuracy since the repairing process is based on etching alone.

Method of repairing a mask

An apparatus and method for inspecting photomask pattern defects, discriminating true defects from false ones, efficiently detects only the true defects. The apparatus includes a light source; an irradiation section for transmitting light from the light source to a photomask; a light detecting section for detecting the light passing through transparent parts of the photomask; an image processing section for acquiring image data of the pattern according to signals from the light detecting section; a first condition setting section for setting a coordinate threshold that defines a misregistration defect in the pattern; a second condition setting section for setting an area threshold that defines an area defect of the pattern; a testing section that determines whether the coordinates of a pattern feature and the area of the pattern satisfy the thresholds upon comparison to a second pattern; and an output section for outputting a signal indicating a defect only when at least one of the thresholds is exceeded.

Apparatus and method for identifying photomask pattern defects

An X-ray mask includes a membrane formed of a material which transmits X-rays, a mask pattern formed on the surface of the membrane, the mask pattern being made of an X-ray absorbing material, and a supporting frame formed of a material which is mechanically deformed by an external signal. The supporting frame supports the membrane. In an exposure method which employs this X-ray mask, the X-ray mask is first disposed above a substrate in alignment therewith. Subsequently, distortion in the mask pattern is corrected by the application of the external signal to the supporting frame of the mask, and the substrate is then irradiated with X-rays through the mask so as to transfer the mask pattern of the mask to the substrate.

Kunihiro Hosono

Papers

Scanning electron microscope for observation of cross section and method of observing cross section employing the same

Method of correcting defects in the pattern of phase shift mask

Method of repairing a mask

Apparatus and method for identifying photomask pattern defects

X-ray mask and exposure method employing the same