An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.

Detachable electrostatic chuck

A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components The CVD chamber is "seasoned" with a protective layer after a dry clean operation and before a substrate is introduced into the chamber The deposited seasoning layer has a lower diffusion rate for typical contaminants in relation to the chamber component materials and covers the chamber component, reducing the likelihood that the naturally occurring contaminants will interfere with subsequent processing steps After deposition of the seasoning layer is complete, the chamber is used for one to n substrate deposition steps before being cleaned by another clean operation as described above and then reseasoned

Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions

A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating

Protective layer for quartz crucibles used for silicon crystallization

A boron nitride crucible having a closed end, an open end, an internal surface and an external surface, and wherein at least a portion of the external surface, preferably proximate the open end of the crucible, has a duplex coating comprising an undercoat of pyrolytic graphite and a top coat of pyrolytic boron nitride. A process for making the boron nitride crucible is also disclosed.

Boron nitride crucible

In the crucible pulling of silicon according to the Czochralski technique,ilicon monoxide forms as a result of the silicon melt reacting with the quartz crucible containing the melt, and evaporates and deposits in the form of solid particles on the upper edge of the crucible, on the monocrystalline rod, on the walls of the vessel, and also on recharging devices in the upper pulling chamber. These solid particles can fall back into the melt and then cause dislocations and polycrystalline growth in the growing silicon rod. As a result of the reaction of the carbon of the hot graphite parts with silicon monoxide, carbon monoxide is also formed and this partially diffuses into the melt and gives rise to carbon impurities in the silicon rod. In addition, because of heat irradiation from the inner wall of the quartz crucible as it becomes more empty, high pulling speeds, such as those usual in crucible-free zone pulling, cannot be obtained. These disadvantages of the conventional crucible-pulling process are effectively obviated according to the invention by a pot-like device which entails a partial covering of the melt surface, the crucible and the space laterally adjoining the crucible.

Device and process for pulling high-purity semiconductor rods from a melt

Mechanical components, e.g. die and/or crucible or the like structures with which single silicon crystals are grown from the melt as shaped articles in thin sheet or ribbon geometry, are advantageously comprised, for their material of construction, of a suitable thermally stable and inert foundation substrate coated or provided on at least the silicon-contacting surface(s) thereof with a thin, uniform, integral surface layer deposit of pyrolitic silicon nitride (Si3 N4) obtained by the chemical vapor deposition (i.e., "CVD") technique.

Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets

Mechanical components such as dies and crucibles, which come in contact with a silicon melt during the formation of single crystalline shaped silicon particles, e.g. thin sheets or ribbons, are coated with silicon oxynitride deposited by chemical vapor deposition techniques.

Apparatus improvements for growing single crystalline silicon sheets

Apparatus for pulling a ribbon shaped crystal from a melt of the same downwardly through a shaping guide having a "V" shaped longitudinal trough for containing the melt. The inner wall of the trough is a die set having a longitudinal slit at the apex of the "V".

Apparatus for the production of ribbon shaped crystals

In combination with a susceptor particularly suited for use in growing a ribbon crystal employing edge-defined film-fed growth techniques and characterized by a susceptor including a die through which a melt is drawn for forming a crystal ribbon, a pair of jets for directing a stream of fluid coolant along a path extended to impinge on the susceptor in close proximity with the die in non-incident relation with the crystal being grown.

/pdf/means-for-growing-ribbon-crystals-without-subjecting-the-16zqpprbv2.pdf

Kyong-Min Kim

Papers

Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets

Apparatus improvements for growing single crystalline silicon sheets

Apparatus for the production of ribbon shaped crystals

Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains