The concept of concurrent multiband low-noise-amplifiers (LNAs) is introduced. A systematic way to design concurrent multiband integrated LNAs in general is developed. Applications of concurrent multiband LNAs in concurrent multiband receivers together with receiver architecture are discussed. Experimental results of a dual-band LNA implemented in a 0.35-/spl mu/m CMOS technology as a demonstration of the concept and theory is presented.

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Concurrent multiband low-noise amplifiers-theory, design, and applications

A review of recent and current work on microwave FET's and amplifiers is presented, and an extensive bibliography of recent articles is appended (250 references). First, the various FET structures (MRSFET's, JFET's, and IGFET's) and their performances are reviewed. Second, the principle of operation is outlined for Si- and GaAs-MESFET's; the basic device physics, equivalent circuit, high-frequency limitations, and noise behavior are treated. Third, the design principles and performance of microwave MESFET amplifiers are summarized.

Microwave Field-Effect Transistors--1976

An X-band monolithic three-stage low noise amplifier (LNA) employing series feedback has demonstrated 1.8 dB noise figure with 30.0 dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.

X-Band Monolithic Series Feedback LNA

This paper critically compares the various monolithic low noise amplifier (LNA) circuit topologies using BiCMOS or MESFET technologies for RF and microwave applications, in addition to the conventional techniques, five newly proposed schemes for the simultaneous noise and input power matching are extensively compared with each other at microwave frequencies. At L-band, the best scheme is found to be the proposed cascode inductive series feedback (CCSF) or common-source inductive series feedback (CSSL)+common-gate inductive parallel feedback (CGPF) when 0.5 /spl mu/m GaAs MESFET is used, while it is cascode resistive parallel feedback (CCPF) when n-p-n BJT is used. At C- and X-bands, the proposed CGPF exhibits the best performance. Other than CGPF, the CSSL+CGPF seems to he the best at 6 GHz, and both CCPF+CGPF and CSSL+CGPF are recommended at 12 GHz. Finally, to verify the feasibility of this approach, a CCPF has been fabricated with 0.5 /spl mu/m GaAs MMIC technology, of which measured results agree well with the simulated ones.

A comparative study on the various monolithic low noise amplifier circuit topologies for RF and microwave applications

A modified H-shaped antenna is proposed for automotive digital terrestrial reception. The antenna is analyzed by the method of moments. The antenna has the feature that a figure-8 radiation pattern is rotated with increasing frequency. Four symmetrically mounted antennas at the top of the front and rear windows of a car have gain to the sides of the car as well as to the front and rear directions. The VSWR is less than 3 from 470 to 710 MHz since the antenna has three resonant modes. Measurement results for a single prototype antenna agree with the calculation results. The reception system adopts an adaptive array based on the maximal ratio combining (MRC) method. A near omnidirectional pattern was obtained in a plotted pattern of steered beam in the horizontal plane with the mounted prototype antennas.

Modified H-shaped antenna for automotive digital terrestrial reception

Microwave transistor amplifiers may be simultaneously matched for optimum noise and input/output VSWR This paper demonstrates a combination of mapping techniques, computer optimization and stability considerations through two amplifier designs (70 MHz and 4000 MHz) to achieve these goals

L. Besser

Papers

Stability Considerations of Low-Noise Transistor Amplifiers with Simultaneous Noise and Power Match