Recent theoretical studies proposed that two-dimensional (2D) GaGeTe crystals have promising high detection sensitivity at infrared wavelengths and can offer ultra-fast operation. This can be attributed to their small optical bandgap and high carrier mobility. However, experimental studies on GaGeTe in the infrared region are lacking and this exciting property has not been explored yet. In this work, we demonstrate a short-wavelength infrared (SWIR) photodetector based on a multilayer (ML) GaGeTe field-effect transistor (FET). Fabricated devices show a p-type behavior at room temperature with a hole field-effect mobility of 8.6 - 20 cm2 V-1s-1. Notably, under 1310 nm illumination, the photo responsivities and noise equivalent power of the detectors with 65 nm flake thickness can reach up to 57 A/W and 0.1 nW/Hz1/2, respectively, at a drain-source bias (Vds) = 2 V. The frequency responses of the photodetectors were also measured with a 1310 nm intensity-modulated light. Devices exhibit a response up to 100 MHz with a 3dB cut-off frequency of 0.9 MHz. Furthermore, we also tested the dependence of the device frequency response on the applied bias and gate voltages. These early experimental findings stimulate the potential use of multilayer GaGeTe for highly sensitive and ultrafast photodetection applications.

Short-wavelength infrared (SWIR) photodetector based on multi-layer 2D GaGeTe

Van der Waals materials are expected to meet the miniaturization and integration challenges in photonic integrated circuits (PIC) as active devices for optical communication. Recently, ultralow threshold lasers, ultra-sensitive or large bandwidth photodetectors have been demonstrated on silicon photonics platforms that are compatible with the state-of-the-art CMOS process. Here we summarize the characteristics of these hetero-integrated light-emitting and photodetecting devices, with focuses on materials, physical mechanisms, and device performances. We also discuss the strategies of future PIC architectures for valley-photonics, hybrid and 3D integrations. This review aims to summarize the most recent progress and to help identify the challenges and opportunities in this rapidly developing area.

Recent progress of silicon integrated light emitters and photodetectors for optical communication based on two-dimensional materials

New materials and designs for 2D-based infrared photodetectors

Controlling Microring Resonator Extinction Ratio via Metal-Halide Perovskite Nonlinearity

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

2D Material Infrared Photonics and Plasmonics.

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

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Silicon/2D-material photodetectors: from near-infrared to mid-infrared.

2D materials (2DMs) meet the demand of broadband and low‐cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon‐2DM photodetectors (PDs). Here, graphene–silicon–graphene waveguide PDs operating at the wavelength bands of 1.55 and 2 µm, showing the potential for large‐scale integration, are demonstrated. For the fabricated PDs, the measured responsivities are ≈0.15 and ≈0.015 mA W−1 for the wavelengths of 1.55 and 1.96 µm, respectively. In particular, the PDs exhibit a high bandwidth of ≈30 GHz, an ultra‐low dark current of tens of pico‐amperes, a high normalized photo‐to‐dark‐current ratio of 1.63 × 106 W−1, as well as a high linear dynamic range of 3 µW to 1.86 mW (and beyond) at 1.55 µm. According to the measurement results for the wavelength bands of 1.55/2.0 µm and the theoretical modeling for the silicon–graphene heterostructure, it is revealed that internal photoemission and photo‐assisted thermionic field emission dominantly contribute to the photoresponse in the graphene–silicon Schottky junctions under moderately high bias voltage, which helps the future work to further improve the performance.

High‐Speed Graphene–Silicon–Graphene Waveguide PDs with High Photo‐to‐Dark‐Current Ratio and Large Linear Dynamic Range

Abstract. Compact passive silicon photonic devices with high performance are always desired for future large-scale photonic integration. Inverse design provides a promising approach to realize new-generation photonic devices, while it is still very challenging to realize complex photonic devices for most inverse designs reported previously due to the limits of computational resources. Here, we present the realization of several representative advanced passive silicon photonic devices with complex optimization, including a six-channel mode (de)multiplexer, a broadband 90 deg hybrid, and a flat-top wavelength demultiplexer. These devices are designed inversely by optimizing a subwavelength grating (SWG) region and the multimode excitation and the multimode interference are manipulated. Particularly, such SWG structures are more fabrication-friendly than those random nanostructures introduced in previous inverse designs. The realized photonic devices have decent performances in a broad bandwidth with a low excess loss of <1  dB, which is much lower than that of previous inverse-designed devices. The present inverse design strategy shows great effectiveness for designing advanced photonic devices with complex requirements (which is beyond the capability of previous inverse designs) by using affordable computational resources.

Laiwen Yu

Papers

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Silicon/2D-material photodetectors: from near-infrared to mid-infrared.

High‐Speed Graphene–Silicon–Graphene Waveguide PDs with High Photo‐to‐Dark‐Current Ratio and Large Linear Dynamic Range

Realization of advanced passive silicon photonic devices with subwavelength grating structures developed by efficient inverse design