An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A method for precise working of material, particularly organic tissue, comprises the step of providing laser pulses with a pulse length between 50 fs and 1 ps and with a pulse frequency from 50 kHz to 1 MHz and with a wavelength between 600 and 2000 nm for acting on the material to be worked. Apparatus, in accordance with the invention, for precise working of material, particularly organic tissue comprising a pulsed laser, wherein the laser has a pulse length between 50 fs and 1 ps and with a pulse frequency of from 50 kHz to 1 MHz is also described.

Method and apparatus for precision working of material

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Methods and systems for thermal-based laser processing a multi-material device

A chirped pulse amplification system includes one or more polarization compensator configured to compensate for polarization altering elements with the chirped pulse amplification system. The polarization compensator is responsive to a sensor configured to provide feedback to the polarization compensator. In some embodiments, the chirped pulse amplification system further includes a controller configured to automatically adjust the polarization compensator responsive to the sensor. The sensor is optionally a power sensor.

Automated polarization correction

PROBLEM TO BE SOLVED: To provide a dicing method which is less in breaking or cracking on a semiconductor wafer, reduces the futility of a usable area on a semiconductor wafer, and enables the achievement of a high production throughput.SOLUTION: Methods of dicing semiconductor wafers, each having a plurality of integrated circuits mounted thereon are disclosed. The method comprises: a step 302 for forming, on a semiconductor wafer, a mask for covering and protecting the integrated circuits; a step 304 for patterning the mask by femtosecond laser scribing to form a patterned mask with gaps and to expose regions between the integrated circuits on the semiconductor wafer; and a step 306 for etching the semiconductor wafer through the gaps of the patterned mask to cut the wafer into the individual integrated circuits.SELECTED DRAWING: Figure 3

Wafer dicing using femtosecond-based laser and plasma etch

A set (50) of one or more laser pulses (52) is employed to remove passivation layer (44) over a conductive link (22). The link (22) can subsequently be removed by a different process such as chemical etching. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.05 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly material removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each target area (51). Conventional wavelengths in the IR range or their harmonics in the green or UV range can be employed.

Lei Sun

Papers

Passivation processing over a memory link

Lasermikrobearbeitung von Halbleiterbauelementen mit mehreren Wellenlängen