Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal?organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour?liquid?solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro-?and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I?V characteristics of ZnO:P nanowire/ZnO:Ga p?n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

https://iopscience.iop.org/article/10.1088/0957-4484/20/33/332001/pdf

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

The discovery and development of novel materials in the field of energy are essential to accelerate the transition to a low-carbon economy. Bringing recent technological innovations in automation, robotics and computer science together with current approaches in chemistry, materials synthesis and characterization will act as a catalyst for revolutionizing traditional research and development in both industry and academia. This Perspective provides a vision for an integrated artificial intelligence approach towards autonomous materials discovery, which, in our opinion, will emerge within the next 5 to 10 years. The approach we discuss requires the integration of the following tools, which have already seen substantial development to date: high-throughput virtual screening, automated synthesis planning, automated laboratories and machine learning algorithms. In addition to reducing the time to deployment of new materials by an order of magnitude, this integrated approach is expected to lower the cost associated with the initial discovery. Thus, the price of the final products (for example, solar panels, batteries and electric vehicles) will also decrease. This in turn will enable industries and governments to meet more ambitious targets in terms of reducing greenhouse gas emissions at a faster pace. The discovery and development of advanced materials are imperative for the clean energy sector. We envision that a closed-loop approach, which combines high-throughput computation, artificial intelligence and advanced robotics, will sizeably reduce the time to deployment and the costs associated with materials development.

/pdf/accelerating-the-discovery-of-materials-for-clean-energy-in-2ejogam5fn.pdf

Accelerating the discovery of materials for clean energy in the era of smart automation

http://www.ambiente.eecs.kumamoto-u.ac.jp/paper/ebihara/ProfEbihara_Paper/Thin%20Solid%20Films,%20Volume%20513,%20Issues%201-2,%2014%20August%202006,%20Pages%2090-94.pdf

Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition

Graphene's high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultrabroadband photodetectors. However, the precise mechanism of photodetection is still debated. Here, we report wavelength and polarization-dependent measurements of metal-graphene-metal photodetectors. This allows us to quantify and control the relative contributions of both photothermo- and photoelectric effects, both adding to the overall photoresponse. This paves the way for a more efficient photodetector design for ultrafast operating speeds.

/pdf/photothermoelectric-and-photoelectric-contributions-to-light-244pgwkqey.pdf

Photothermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors.

We report on the formation of high-density regular arrays of nanometer-scale rods using femtosecond laser irradiation of a silicon surface immersed in water. The resulting surface exhibits both micrometer-scale and nanometer-scale structures. The micrometer-scale structure consists of spikes of 5-10 µm width, which are entirely covered by nanometer-scale rods that are roughly 50 nm wide and normal to the surface of the micrometer-scale spikes. The formation of the nanometer-scale rods involves several processes: refraction of laser light in highly excited silicon, interference of scattered and refracted light, rapid cooling in water, roughness-enhanced optical absorptance, and capillary instabilities. As semiconductor processing reaches smaller and smaller feature sizes, much research is dedicated to the development of new methods for producing regular, nanometer-scale structures on solid surfaces. Lithography and chemical etching are powerful methods that offer control over the shape and size of structures, but they are often complex and costly. 1–3 In contrast, pulsed laser-assisted etching 4,5 is a simple but effective method for fabricating small structures directly onto a substrate. However, most of the cross sections of such structures are typically larger than the laser wavelength. 4–14

High-Density Regular Arrays of Nanometer-Scale Rods Formed on Silicon Surfaces via Femtosecond Laser Irradiation in Water

The pulsed laser deposition is a new technique for the growth of thin films,which has been attended generally by people recently The physical principle, unique characteristics and the proceeding of the study were introduced briefly In addation, the result of the PtSi nanometer thin film based on silicon prepared by the pulsed laser deposition was describedPULS

Li Mei

Papers

Pulsed laser deposition of thin films