Researchers demonstrate solution-processed light-emitting diodes based on a quantum-dot emissive layer between an organic hole-transport layer and an electron-transport layer of ZnO nanoparticles. The device achieves a luminance of 68,000 cd m−2 and power efficiencies of up to 8.2 lm W−1.

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Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures

Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence) or electric field (electroluminescence). In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

https://www.mdpi.com/1996-1944/3/4/2260/pdf

Quantum Dots and Their Multimodal Applications: A Review

We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23,040, 218,800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.

Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure

Lattice strain is a structural parameter that has been exploited in microelectronic devices with great success, but its role in colloidal nanocrystals is still poorly understood. Here we have developed strain-tunable colloidal nanocrystals by using lattice-mismatched heterostructures that are grown by epitaxial deposition of a compressive shell (e.g., ZnSe or CdS) onto a soft and small nanocrystalline core (e.g., CdTe). This combination of a “squeezed” core and a “stretched” shell causes dramatic changes in both the conduction and valence band energies. As a result, we show that core-shell QDs with standard type-I behavior are converted into type-II nanostructures, leading to spatial separation of electrons and holes, extended excited state lifetimes, and giant spectral shifting. This new class of strain-tunable QDs exhibits narrow light emission with high quantum yield across a broad range of visible and near-infrared wavelengths (500 nm to 1050 nm).

/pdf/tuning-the-optical-and-electronic-properties-of-colloidal-36rfoabdzl.pdf

Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain

We report high-efficiency blue-violet quantum-dot-based light-emitting diodes (QD-LEDs) by using high quantum yield ZnCdS/ZnS graded core–shell QDs with proper surface ligands. Replacing the oleic acid ligands on the as-synthesized QDs with shorter 1-octanethiol ligands is found to cause a 2-fold increase in the electron mobility within the QD film. Such a ligand exchange also results in an even greater increase in hole injection into the QD layer, thus improving the overall charge balance in the LEDs and yielding a 70% increase in quantum efficiency. Using 1-octanethiol capped QDs, we have obtained a maximum luminance (L) of 7600 cd/m2 and a maximum external quantum efficiency (ηEQE) of (10.3 ± 0.9)% (with the highest at 12.2%) for QD-LEDs devices with an electroluminescence peak at 443 nm. Similar quantum efficiencies are also obtained for other blue/violet QD-LEDs with peak emission at 455 and 433 nm. To the best of our knowledge, this is the first report of blue QD-LEDs with ηEQE > 10%. Combined with ...

High-Efficiency, Low Turn-on Voltage Blue-Violet Quantum-Dot-Based Light-Emitting Diodes

We report a multilayer solution-processed blue light-emitting diode based on colloidal core/shell CdS/ZnS nanocrystal quantum dots (QDs). At a low-operating voltage of 5.5 V, the device emits spectrally pure blue radiation at 460 nm with a narrow full-width-at-half-maximum bandwidth of 20 nm and high brightness up to 1600 cd/m2. Broad-band, long-wavelength emission from the polymer components and deep traps in the QDs are minimized to less than 5% of the total emission.

Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots

We report a bright and color-saturated blue light-emitting-diode based on colloidal core/shell-CdS/ZnS quantum-dots. Broad-band, long-wavelength emission from the deep-traps in QDs is, for the first time, minimized to less than 5% of the total emission.

Linsong Li

Papers

Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots

Bright and color-saturated emission from blue light emitting diodes based on solution-processed colloidal nanocrystal quantum dots