The present disclosure generally relates to nanoparticles comprising a substantially hydrophobic acid, a basic therapeutic agent having a protonatable nitrogen, and a polymer. Other aspects include methods of making and using such nanoparticles.

Therapeutic nanoparticles comprising a therapeutic agent and methods of making and using same

The invention belongs to the technical field of semiconductors, and particularly relates to a power semiconductor device and a manufacturing method thereof, in particular to a reverse conducting MOS trigger negative resistance device. The power semiconductor device comprises an N-type substrate, wherein a P-type base region is arranged on the upper surface of the N-type substrate; an N-type source region, a PIN anode region and an N-type emitter region are arranged on the upper surface of the P-type base region, wherein the N-type source region is the source end of an MOS tube, the PIN anode region is the anode region of a reverse PIN tube, and the N-type emitter region is the cathode region of an NPNP thyristor; a P-type anode region is arranged on the lower surface of the N-type substrate, an N-type anode region is arranged at the middle position of the P-type anode region 7, and the N-type anode region is directly connected with the N-type substrate without passing through the P-type anode region and is contained in the P-type anode region. The power semiconductor device has the beneficial effects that the device has normally-closed function, extremely high peak current capacity and current rise rate and reverse conducting capacity; and moreover, the invention also provides the simple manufacturing method, and the device disclosed by the invention also has higher reliability.

Power semiconductor device and manufacturing method thereof

The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator), and belongs to the technical field of semiconductor power devices. According to the invention, a shielding trench structure which is equipotential with emitter metal is introduced on the basis of the traditional CSTBT device structure, and the trench depth of the shielding trench structure is enabled to be greater than that of a charge storage layer so as to shield an electric field of the charge storage layer. The introduction of the shielding trench structure plays an effective charge compensation effect for the charge storage layer, thus improves restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the charge storage layer, and improves thebreakdown voltage of the device, thereby being conducive to improving the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device, obtaining a wider short-circuit safe working area, being conducive to reducing the saturation current density of the device at the same time, and further improving the short-circuit safe working area of the device. In addition, the trench gate charge storage type IGBT significantly reduces the grid capacitance of the device and especially reduces the grid-collector capacitance, so that the switching speed of the device is improved, and the switching loss of the device and requirements for the ability of a gate driving circuit are reduced.

Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof

The invention discloses a trench gate charge storage type IGBT, and belongs to the technical field of semiconductor power devices. A conventional trench gate structure is widened, and a side wall gateelectrode structure is employed for forming a mesa structure located below a base region. moreover, a shielding trench structure for shielding the electric field of a charge storage layer is introduced, thereby improving the carrier injection enhancement effect, and improving the compromise between a forwarding ON voltage drop Vceon and the OFF loss Eoff. The electric field concentration effect at the tip of the bottom of a trench is alleviated, and the breakdown voltage of a device is effectively improved. The gate capacitance of the device, especially the Miller capacitance CGC and the gatecharge QG, is reduced, the switching speed of the device is improved, the switching loss of the device is reduced, and the requirements for the capability of a gate drive circuit are reduced. The constraint on the doping concentration of an N-type charge storage layer and the withstand voltage of the device from the thickness are avoided, the saturation current density is reduced, and a short-circuit safe operating region (SCSOA) of the device is improved. Moreover, an EMI effect is effectively inhibited when the device is turned on. In addition, the manufacturing method is compatible with aconventional trench gate charge storage type IGBT manufacturing method.

Trench gate charge storage type IGBT and manufacturing method thereof

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a reverse conducting IGBT device. Compared with a conventional reverse conducting IGBT structure, emission electrode schottky metal is additionally arranged in source electrode metal, and an N-region is arranged below an N-type electric field stop layer so that a reverse recovery characteristic working under a freewheel diode mode is respectively improved and generation of the snapback phenomenon is suppressed. The beneficial effects of the reverse conducting IGBT device are that the reverse conducting IGBT device has short reverse recovery time, the snapback phenomenon can be eliminated at a shorter back P+ collector region, and the preparation technology of the reverse conducting IGBT device is compatible with the technology of the conventional IGBT device. The invention is especially suitable for the reverse conducting IGBT device.

Reverse conducting IGBT device

A reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and a manufacturing method thereof belong to the technical field of power semi-conductor devices. On the basis of a traditional RC-IGBT device structure, a P-type well region 12 is introduced between an N+ collector short circuit area 11 and an N type electric field preventing layer 8, and the N type electric field preventing layer 8 and the P-type well region 12 are insulated from a metal collector 10 by adopting an isolation medium 13. On the basis of traditional RC-IGBT device characteristics, the device can fully eliminate an intrinsic Snap back phenomenon of a traditional RC-IGBT during connection in the positive direction and has a similar loss characteristic as the traditional RC-IGBT. The RC-IGBT device and the manufacturing method are applicable to the field of semi-conductor power devices from small power to large power and power integrated circuits.

Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof

The invention discloses an RC-LIGBT device and a manufacturing method thereof, and belongs to the field of power semiconductor devices and integrated circuits. According to the RC-LIGBT device, on the basis of a traditional RC-LIGBT structure, a P-type well region is arranged in a collector structure of the device, surrounds an N+ collector short circuit region in the collector structure and is connected with an N-type field stopping area in a short-circuited mode through connection metal. In the forward conduction process of the RC-LIGBT device, the influence on the starting process by a back N-type region can be shielded, and therefore the inherent negative resistance phenomenon of a traditional RC-LIGBT can be eliminated completely, and the stability and reliability of the device are improved. The RC-LIGBT device is suitable for the power semiconductor integrated circuits.

RC-LIGBT device and manufacturing method thereof

The invention belongs to the technical field of power semiconductor devices and provides a bidirectional IGBT device and manufacturing method thereof. The cellular structure of the bidirectional IGBT device comprises two MOS structures symmetrically arranged on the front face and the back face of a substrate drift region, N-shaped buried layers are arranged between P-shaped body areas of the MOS structures and the substrate drift region, and P-shaped buried layers are arranged between the bottom of grid structures of MOS structures and the substrate drift region. The bidirectional IGBT device can be formed by respectively manufacturing two silicon wafers and bonding the silicon wafers, and also can be formed by processing the double faces of a single wafer. According to the bidirectional IGBT device and manufacturing method of the bidirectional IGBT device, an IGBT has good symmetrical positive and reverse characteristics and has a thinner drift region thickness, better carrier concentration distribution and electric field distribution under the same device withstand voltage, so that the device obtains the trade-off of a better positive conductive characteristic, a positive conductive characteristic and a turn-off loss characteristic.

Liu Jingxiu

Papers

Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof

Power semiconductor device and manufacturing method thereof

RC-LIGBT device and manufacturing method thereof

Bidirectional IGBT device and manufacturing method thereof

Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof